Progress in modeling of fluid flows in crystal growth processes

Chen, Qi-Sheng; Jiang, Yanni; Yan, Junyi; Qin, Ming

doi:10.1016/j.pnsc.2008.06.003

Cited by 21 publications

(11 citation statements)

References 55 publications

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“…This advance enables a significant improvement in device operational stability, device performance, and processing reproducibility of FAPbI 3 -based perovskite solar cells. Inspired by the seed-assisted growth of Si and GaAs semiconductor ingots 32 – 34 , we incorporate submicron-sized crystalline perovskite seeds in the PbI 2 layer in the two-step sequential deposition. The perovskite seeds act as nuclei for the ensuing perovskite growth when alkylammonium halides react with PbI 2 .…”

Section: Introductionmentioning

confidence: 99%

Perovskite seeding growth of formamidinium-lead-iodide-based perovskites for efficient and stable solar cells

et al. 2018

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Formamidinium-lead-iodide (FAPbI3)-based perovskites with bandgap below 1.55 eV are of interest for photovoltaics in view of their close-to-ideal bandgap. Record-performance FAPbI3-based solar cells have relied on fabrication via the sequential-deposition method; however, these devices exhibit unstable output under illumination due to the difficulty of incorporating cesium cations (stabilizer) in sequentially deposited films. Here we devise a perovskite seeding method that efficiently incorporates cesium and beneficially modulates perovskite crystallization. First, perovskite seed crystals are embedded in the PbI2 film. The perovskite seeds serve as cesium sources and act as nuclei to facilitate crystallization during the formation of perovskite. Perovskite films with perovskite seeding growth exhibit a lowered trap density, and the resulting planar solar cells achieve stabilized efficiency of 21.5% with a high open-circuit voltage of 1.13 V and a fill factor that exceeds 80%. The Cs-containing FAPbI3-based devices show a striking improvement in operational stability and retain 60% of their initial efficiency after 140 h operation under one sun illumination.

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Section: Introductionmentioning

confidence: 99%

Perovskite seeding growth of formamidinium-lead-iodide-based perovskites for efficient and stable solar cells

et al. 2018

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“…Figure 5d-f show the corresponding flow fields in the cavity. and otherwise adiabatic walls [58]. Secondly, it should be noted that the modified thermal boundary conditions do have a pronounced effect on the temperature distribution and fluid flow field in the autoclave cavity [58].…”

Section: Resultsmentioning

confidence: 99%

“…Several groups have so far focused on 2D calculations [25,27,29,57], taking advantage of their much lower computational cost. In their 2008 review on modeling of crystal growth processes in general, Chen et al suggest the coupling of a 2D axisymmetric global thermal field model with a 3D model for the fluid flow, among others, for ammonothermal growth modeling [58]. Experimentally validated simulations of an ambient pressure model of a hydrothermal crystal growth reactor reveal transient 3-dimensional fluid flow but also conclude that the time-averaged flow and temperature fields are axially symmetric, if only axially symmetric solids are considered [59].…”

Section: Axisymmetric 2d Calculations Versus 3d Calculationsmentioning

confidence: 99%

“…For their subsequent 3D simulation, Erlekampf et al chose the inner autoclave wall as the domain boundary, using the temperature distribution from their 2D model as the boundary condition [26]. Most recently, Schimmel et al reported a first 2D simulation that expands the domain boundary even further in order to investigate the temperature distribution in the autoclave walls [58].…”

Section: Boundary Conditionsmentioning

confidence: 99%

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Numerical Simulation of Ammonothermal Crystal Growth of GaN—Current State, Challenges, and Prospects

et al. 2021

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Numerical simulations are a valuable tool for the design and optimization of crystal growth processes because experimental investigations are expensive and access to internal parameters is limited. These technical limitations are particularly large for ammonothermal growth of bulk GaN, an important semiconductor material. This review presents an overview of the literature on simulations targeting ammonothermal growth of GaN. Approaches for validation are also reviewed, and an overview of available methods and data is given. Fluid flow is likely in the transitional range between laminar and turbulent; however, the time-averaged flow patterns likely tend to be stable. Thermal boundary conditions both in experimental and numerical research deserve more detailed evaluation, especially when designing numerical or physical models of the ammonothermal growth system. A key source of uncertainty for calculations is fluid properties under the specific conditions. This originates from their importance not only in numerical simulations but also in designing similar physical model systems and in guiding the selection of the flow model. Due to the various sources of uncertainty, a closer integration of numerical modeling, physical modeling, and the use of measurements under ammonothermal process conditions appear to be necessary for developing numerical models of defined accuracy.

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“…Muller et al [4,5] simulated the temperature distribution in the growth system, it is shown that the temperature in the powder is highly non-uniform and the radial variations of 30-50 K were observed along the powder surface. Chen et al [6][7][8][9][10] developed a 2-D coupled flow-kinetics model for the PVT growth of SiC crystal. The model couples calculations of the 2-D gas flow and the growth kinetics at the crystal interface.…”

Section: Introductionmentioning

confidence: 99%

Improvement of the thermal design in the SiC PVT growth process

Yan

Chen

Jiang

et al. 2014

Journal of Crystal Growth

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a b s t r a c tThe physical vapor transport (PVT) method is used to grow silicon carbide (SiC) crystals, which are difficult to be grown by other methods. In this paper, a field-coordination theory is involved to optimize the SiC PVT growth process. By using a finite volume-based computational method, we calculate the flow field as well as species concentration field before and after improvement of the thermal design, respectively. The shape of the SiC crystal grown using the improved thermal design is also shown.

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Progress in modeling of fluid flows in crystal growth processes

Cited by 21 publications

References 55 publications

Perovskite seeding growth of formamidinium-lead-iodide-based perovskites for efficient and stable solar cells

Perovskite seeding growth of formamidinium-lead-iodide-based perovskites for efficient and stable solar cells

Numerical Simulation of Ammonothermal Crystal Growth of GaN—Current State, Challenges, and Prospects

Improvement of the thermal design in the SiC PVT growth process

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