Progress in the semiconductor/diamond heterogeneous integrations: Technical methods, interfacial phonon transport, and thermal characterizations

Zhao, Xinlong; Hu, Wenbo

doi:10.1016/j.surfin.2024.104178

Surfaces and Interfaces

2024

DOI: 10.1016/j.surfin.2024.104178

|View full text |Cite

Progress in the semiconductor/diamond heterogeneous integrations: Technical methods, interfacial phonon transport, and thermal characterizations

Xinlong Zhao,

Wenbo Hu

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

2025

Publication Types

Select...

Article3

Relationship

Self Cite0

Independent3

Authors

Journals

Cited by 3 publications

References 236 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Interfacial Reaction Boosts Thermal Conductance of Room‐Temperature Integrated Semiconductor Interfaces Stable up to 1100 °C

Ji,

Huang,

Ohno

et al. 2024

Adv Elect Materials

View full text Add to dashboard Cite

Overheating has emerged as a primary challenge constraining the reliability and performance of next‐generation high‐performance (ultra)wide bandgap (WBG or UWBG) electronics. Advanced heterogeneous bonding of high‐thermal‐conductivity WBG thin films and substrates not only constitutes a pivotal technique for fabricating these electronics but also offers potential solutions for thermal management. This study presents the integration of 3C‐silicon carbide (SiC) thin films and diamond substrates through a surface‐activated bonding technique. Notably, following annealing, the interfaces between 3C‐SiC and diamond demonstrate an enhancement in thermal boundary conductance (TBC), reaching up to ≈300%, surpassing all other grown and bonded heterointerfaces. This enhancement is attributed to interfacial reactions, specifically the transformation of amorphous silicon into SiC upon interaction with diamond, which is further corroborated by picosecond ultrasonics measurements. After annealing at 1100 °C, the achieved TBC (150 MW m−2 K−1) is among the highest among all bonded diamond interfaces. Additionally, the visualization of large‐area TBC, facilitated by femtosecond laser‐based time‐domain thermoreflectance measurements, shows the uniformity of the interfaces which are capable of withstanding temperatures as high as 1100 °C. The research marks a significant advancement in the realm of thermally conductive WBG/substrate bonding, which is promising for enhanced cooling of next‐generation electronics.

show abstract

Interfacial Reaction Boosts Thermal Conductance of Room‐Temperature Integrated Semiconductor Interfaces Stable up to 1100 °C

Ji,

Huang,

Ohno

et al. 2024

Adv Elect Materials

View full text Add to dashboard Cite

show abstract

Thermal boundary conductance enhancement of the Si/diamond interface via atomic transition strategy

Zhao,

Qu,

Deng

et al. 2025

Surfaces and Interfaces

View full text Add to dashboard Cite

Mechanical regulation to interfacial thermal transport in GaN/diamond heterostructures for thermal switch

Yu,

Li,

et al. 2024

Nanoscale Horiz.

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Progress in the semiconductor/diamond heterogeneous integrations: Technical methods, interfacial phonon transport, and thermal characterizations

Cited by 3 publications

References 236 publications

Interfacial Reaction Boosts Thermal Conductance of Room‐Temperature Integrated Semiconductor Interfaces Stable up to 1100 °C

Interfacial Reaction Boosts Thermal Conductance of Room‐Temperature Integrated Semiconductor Interfaces Stable up to 1100 °C

Thermal boundary conductance enhancement of the Si/diamond interface via atomic transition strategy

Mechanical regulation to interfacial thermal transport in GaN/diamond heterostructures for thermal switch

Contact Info

Product

Resources

About