Propagation of 1-µm Bubbles in Contiguous Disk Devices

The growth and properties of films of a novel composition, (SmLuCa)3 (FeVSi)5O12, for 4-μm period Ion-Implanted Propagation Pattern devices, are described. The use of vanadium substitution to lower 4πMs yields films with high Curie temperatures (Tc =512–524 °K). Small amounts of silicon are added for lattice matching of the films to the substrate and also to increase the Q value. The presence of vanadium in films was also found to substantially increase the Faraday rotation. The bubble size in these films is nearly constant in the temperature range of −50° to +150 °C. The films also have a high mobility and low dynamic coercivity. Preliminary results of bubble propagation in these films in the temperature range −50° to +160 °C are described. It is expected that because of a combination of the desirable magnetic properties, these films will find a widespread use in bubble devices requiring operations to higher temperatures.

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High-frequency propagation and failure of contiguous disk magnetic bubble devices

Zhang

Humphrey

1982

Journal of Applied Physics

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High-frequency propagation and failure of contiguous disk devices in an ion-implanted 3-μm YSmLuCaGe garnet film were investigated by using high-speed optical sampling. The minimum drive field, the bias field operating margin, and the bubble position with respect to the instantaneous rotating field direction were found to change with the frequency of the drive field. The shape and position of bubbles during the propagation were measured so that the instantaneous velocity dependence of the frequency of the drive field could be calculated. This study was done on a selection of different tracks so that the dependence of the geometry of the tracks could be included. It was found that more uniform instantaneous velocity leads to lower minimum drive field and a higher rotating frequency limit. The cause of high-frequency failure was examined and found generally to be the limitation of the maximum velocity of bubbles causing a phase lag greater than 90°. This limitation can be caused either by a low drive or by a saturation velocity.

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Propagation of 1-µm Bubbles in Contiguous Disk Devices

Cited by 9 publications

References 10 publications

The effect of ion implantation on epitaxial magnetic garnet thin films

The effect of ion implantation on epitaxial magnetic garnet thin films

Preparation and properties of V-substituted garnet films for ion-implanted 1.0-micron bubble devices with improved high-temperature propagation

High-frequency propagation and failure of contiguous disk magnetic bubble devices

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