Vacuum
 1989
DOI: 10.1016/0042-207x(89)90202-9
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Properties of SOI structures formed by high dose oxygen implantation into silicon

Dian-Tong Lu
1
,
Lu Wu-Xing
2
,
Zhong-Lie Wang
3
et al.
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Cited by 4 publications
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The IR properties in SOI wafers formed by oxygen implantation into silicon

Lu
1
,
Zheng
2
,
Wang
3
et al. 1991
Nuclear Instruments and Methods in Physics Research Section B:
10
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The IR properties in SOI wafers formed by oxygen implantation into silicon

Lu
1
,
Zheng
2
,
Wang
3
et al. 1991
Nuclear Instruments and Methods in Physics Research Section B:
10
0
0
0
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SOI structures produced by oxygen ion implantation and their annealing behaviour

Lirong
1
,
Lu
2
,
Wang
3
et al. 1991
Nuclear Instruments and Methods in Physics Research Section B:
4
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Properties of SOI-SIMNI films

Lu
1
,
Ryssel2
1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)
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