Proton radiation damage effects on the response of high speed communication avalanche photodiodes (notice of removal)

Abstract

Abstract. This paper discusses the radiation dependent characteristics of avalanche photodiodes (APDs). The reliability, of semiconductor detectors, is very dependent on the degradation modes. In this study, we present the main irradiation effects such as the multiplication gain, minority carrier life time, illumination, and radiation damage coefficient. Protons radiation effects, on the model of two different silicon avalanche photodiode structures, has been investigated. The results demonstrate that the model can accurately calculate the internal parameters of the APDs and produce data that can be directly compared with measurements. The fluence effects of 51 MeV proton irradiation, on the photosensitivity and signal to noise ratio, are also investigated. The objective was to analyze the effect depletion region volume and carrier concentration, of the i-region of APDs, on radiation hardness. Moreover, we have investigated, deeply, some of the degradation performance and capabilities of typical APDs, currently used in many communication and sensing systems, over wide range of the affecting parameters. APDs are used in systems that require coherent, and often single mode, light such as high data rate communications and sensing applications. APDs are an attractive receiver choice for low signal applications because their internal gain mechanism can improve signal to noise ratio. Additionally, we have taken into account the harmful effects of proton radiation on the device performance such as signal to noise ratio, bit error rate, gain, sensitivity, device responsitivity and operating efficiency. Subject terms: excess noise; silicon avalanche photodiodes; signal to noise ratio; bit error rate; radiation damage; sensing systems and irradiation effects.