Pseudo electric field and pumping valley current in graphene nanobubbles

Gate-Tunable Asymmetric Quantum Dots in Graphene-Based Heterostructures: Pure Valley Polarization and Confinement

“…Graphene has been widely used as a vital two-dimensional (2D) material for nextgeneration devices due its several degrees of freedom. It is constantly used in nanoelectronics due to its high carrier mobility [1][2][3], long mean free path [4][5][6] and tunable density using external fields [7][8][9]. Graphene on realistic substrates exhibits induced proximity effects which are highly desirable for spintronics applications, due to the presence of several SOCs [10][11][12][13].…”

“…In fact, they can be used to attain valley polarization that provides valley-driven currents and encoding of the information [16][17][18]. In this context, producing valleytronic devices able to manipulate valley-polarized currents [9,[19][20][21] and optoelectronic effects [22][23][24], to deal with information based on momentum space, is highly desirable.…”

“…Recent advances in achieving quantum confinement in graphene-based systems have opened new paths to lifting the valley degeneracy, using graphene quantum dots (GQDs) and the induced effects by electrostatic potentials and magnetic or pseudo-magnetic fields in nanobubble QDs [9,[27][28][29][30].…”