Pyroelectric Arrays: Ceramics and Thin Films

Abstract

Pyroelectric infra-red detectors have been of-interest for many years because of their wide wavelength response, good sensitivity and lack of need for cooling. They have achieved a wide market acceptance for such applications as people sensing, IR spectrometry (especially for environmental protection) and flame/fire protection. Arrays of such detectors, comprising a pyroelectric material interfaced to an application specific integrated circuit for signal amplification and read out, provide an attractive solution to the problem of collecting spatial information on the IR distribution in a scene and a range of new applications are appearing for such devices, from thermal imaging to people sensing and counting. The selection of the best material to use for such a device is very important. Because all polar dielectrics are pyroelectric, there is a very wide range of such materials to choose. The performance of a pyroelectric IR sensor array can be derived from the physics of their operation and figures-of-merit (FoM) defined that will describe the performance of a material in a device, in terms of its basic pyroelectric, dielectric and thermal properties. These FoM and their appropriateness for the array application are reviewed. Large arrays of small detectors are best served by the use of pyroelectric materials with permittivities between 200 and 1000, depending upon the element size and the element thermal conductance, and a maximised FoM F D = p{c (εε o tan δ) 1/2 }. Such properties are found in ferroelectric perovskite ceramics and a wide range have been explored for their use in pyroelectric arrays. These include materials based on compositions in the PbZr x Ti 1−x O 3 (PZT) system, for example close to PbZrO 3 , with Curie temperatures well above ambient. Examples of the ways in which these materials can be modified by doping to optimise their FoM and other important properties such as electrical resistivity are given and the physics operating behind this discussed. The performances and costs of uncooled pyroelectric arrays are ultimately driven by the materials used. For this reason, continuous improvements in materials technology are important. In the area of bulk ceramics, it is possible to obtain significant improvements in both production costs and performance though the use of tape-cast, functionally-gradient materials. Finally, the use of directly-deposited ferroelectric thin films on silicon ASIC's is offering considerable potential for low cost high performance pyroelectric arrays. The challenges involved in developing such materials will be discussed, especially from the aspect of low temperature deposition and other fabrication issues, such as patterning. Sol gel deposition provides an excellent technique for thin film growth and Mn-doped PZT films can be grown at 560 • C with a FoM F D exceeding those of many bulk materials.

Механизмы Поглощения Терагерцового И Инфракрасного Излучения В Пленках PZT

“…Эти материалы в виде керамик и кри-сталлов обладают высокими значениями остаточной по-ляризации, достигающими 20−90 µС/cm 2 . Низкочастот-ная диэлектрическая проницаемость, составляющая не менее 10 3 , слабо зависит от частоты вплоть до GHz диапазона [1]. Согласно фазовой диаграмме, твердые растворы PZT обладают тетрагональной структурой в области больших концентраций титана и ромбоэдриче-ской в случае больших концентраций циркония (край-ние точки -классический сегнетоэлектрик PbTiO 3 и антисегнетоэлектрик PbZrO 3 ) [2].…”

“…Особое место занимают исследования пленочных образцов различной толщины и морфологии. Пленки PZT в составе многослойных гетероструктур нашли применение в элементах сегнетоэлектрической памяти FeRAM [5,6], пьезоэлектрических микроэлектромехани-ческих системах MEMS [7,8], пьезоэлектрических тран-зисторах [9], пироприемниках [10], энергосберегающих устройствах [11], устройствах на основе эффекта магни-тострикции [12][13][14].…”

Влияние Кристаллической Структуры На Электрические Свойства Тонкопленочных PZT Структур

“…Тонкие пленки цирконата-титаната свинца (PZT) про-должают оставаться одним из самых перспективных материалов для применения в электронике, включая энергонезависимую сегнетоэлектрическую (СЭ) память (FeRAM), пьезоэлектрические микроэлектромеханиче-ские системы (MEMS), пироэлектрические приемники ИК изображения, энергосберегающие устройства и др., что связано с высокими значениями спонтанной поля-ризации, пьезо-и пироэлектрических коэффициентов, а также с относительно низкой температурой кристалли-зации перовскитной фазы [1][2][3][4][5][6][7][8][9].…”

Improvement of the Figure of Merit in Pb[(Mg1/3Ta2/3)0.7Ti0.3]O3Systems

“…Complex perovskite relaxors with the general formula Pb(B' 1/3 B'' 2/3 )O 3 , are of high interest due to their excellent piezoelectric and pyroelectric properties [1]. Relaxor ferroelectrics, exhibit unusual strong frequency-dependent properties because of the chemical inhomogeneity of the nano-scale in the B-site sub-lattice.…”