Quadruple and Sextuple Cross-Coupled SRAM Cell Designs With Optimized Overhead for Reliable Applications

Yan, Aibin; Xiang, Jing; Cao, Aoran; He, Zhihui; Cui, Jie; Ni, Tianming; Huang, Zhengfeng; Wen, Xiaoqing; Girard, Patrick

doi:10.1109/tdmr.2022.3175324

Cited by 40 publications

(17 citation statements)

References 38 publications

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“…Noted that the scheme in this section includes an optimization problem. The optimization model contains objective function [23][24][25][26][27][28][29][30][31][32][33], and it includes constraints [34][35][36][37][38][39][40][41][42][43][44]. To implement this problem on network, it is needed to uses smart devices [45][46][47][48][49][50] and Telecommunication equipment [51][52][53][54][55].…”

Section: Formulation Of the Schemementioning

confidence: 99%

“…In these constraints, the binary variable x is used to prevent simultaneous charging and discharging of EVs. The limitations of the apparent power and the harmonic current passing through the AC/DC converter in the electric spring are considered in (24) and (25), respectively. As mentioned, there is a non-critical load in the output of the IUEE that can play an effective role in regulating ADN voltage by changing its internal characteristics [15].…”

Section: Operation Model Of the Iueementioning

confidence: 99%

“…Here, to estimate the operation limitations and power quality of the ADN, ( 12)-( 18), the limit of energy stored in EV batteries, (21), and the limit of electric spring capacity, (24), the penalty function method [72] is used. In this method, the fitness function (FF) is equal to the sum of the objective function (1), F, and the sum of the penalty functions resulting from the constraints ( 12)-( 18), (21), and (24). The penalty function for the constraint a ≤ b is equal to μ.max (0, a − b), where μ ≥ 0 represents the Lagrange multiplier and is determined and updated by the SCA+GWO algorithm.…”

Section: Hea-based Solution Processmentioning

confidence: 99%

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Power management of harmonic polluted active distribution network in the presence of integrated unit of electric spring and electric vehicles parking lot

Rohani¹,

Nahavandi

Abasi

et al. 2023

IET Generation Trans & Dist

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This paper presents the optimal scheduling of active distribution network (ADN) with linear and non‐linear loads in the presence of an integrated unit of electric spring and electric vehicle parking lot (IUEE). The proposed scheme is formulated in the form of three‐objective optimization, which minimizes the expected operating cost of the ADN, voltage deviation function (VDF), and the total harmonic distortion (THD) of the voltage in separate objective functions. Constraints include harmonic power flow (HPA) equations, operation and power quality limits, and operation model of the IUEE. This scheme has uncertainties of load, energy price, and energy demand of EVs, which are modelled here using stochastic programming. Next, the sum of the weighted functions method as a subset of the Pareto optimization technique is adopted to extract the integrated single‐objective problem. Then, Sine‐Cosine Combined Algorithm (SCA) and Gray Wolf Optimization (GWO) are used to achieve an optimal solution. In the end, by examining the numerical results obtained from the implementation of the proposed scheme on a 69‐bus ADN, the capability of the design in enhancing the economic situation, operation, and power quality of the ADN compared to network power flow studies obtained by optimal scheduling of the IUEE is confirmed.

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Section: Formulation Of the Schemementioning

confidence: 99%

Section: Operation Model Of the Iueementioning

confidence: 99%

Section: Hea-based Solution Processmentioning

confidence: 99%

See 1 more Smart Citation

Power management of harmonic polluted active distribution network in the presence of integrated unit of electric spring and electric vehicles parking lot

Rohani¹,

Nahavandi

Abasi

et al. 2023

IET Generation Trans & Dist

View full text Add to dashboard Cite

show abstract

“…If the energy particle hits the storage node "Q" (as shown in Figure 15), the stored value at node "Q" ("1") changes to "0". 13 In this case, P7 turns on, while N2 turns off for a brief period. Since transistors P3 and P4 are in series with P7 and are strong transistors, the maximum voltage drop occurs at the source of P7 (at node 'S').…”

Section: Flip and Recoverymentioning

confidence: 99%

A 14T radiation hardened SRAM for space applications with high reliability

Bai,

Qin,

et al. 2023

Circuit Theory & Apps

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SummaryStatic Random Access Memory (SRAM) is vital in aerospace applications, but it may experience soft errors in strong radiation environments. This paper proposes a reconfigurable radiation SRAM with two operating modes catering to different environmental requirements: (1) traditional triple modular redundancy mode used when the radiation environment is strong and (2) SRAM cell expansion mode used when the radiation is not very strong. For example, when the memory capacity of a single module is 8 k, the memory capacity is 8 k in traditional triple modular redundancy mode, but it can be tripled to 24 K in extended mode. As can be obviously seen, this design can adjust the size according to the needs. In SRAM cell expansion mode, the proposed 14T SRAM cell enables the memory to maintain radiation resistance. Compared with DICE, RHBD‐12T, and WHIT, the read speed is improved by 3.8%, 5.7%, and 11.5% respectively, but compared with WE‐QUATRO, the read speed is reduced by 1.9%. The hold static noise margin is 1.378 times than DICE, 1.201 times than WE‐QUATRO, 1.045 times than RHBD‐12T, and 1.14 times than WHIT, respectively. The proposed 14T cell in this paper exhibits the highest critical charge value compared with the other cells. Combined with the expansion mode of the reconfiguration design, it shows great stability.

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“…Nevertheless, using too many PMOS transistors makes the cell more susceptible to SEU. Yan et al 19 proposed the QCCS12T cell and its reliability‐improved version, the SCCS18T cell, where the QCCS12T cell can only tolerate SEU and the SCCS18T cell can tolerate partial SEDNUs but at a very high cost in terms of power consumption and area.…”

Section: Introductionmentioning

confidence: 99%

A highly stable and low‐cost 12T radiation hardened SRAM cell design for aerospace application

Liu

Xie

et al. 2023

Circuit Theory & Apps

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SummaryIn this paper, a highly stable and low‐cost 12T (HSLC12T) radiation hardened static‐random‐access‐memories (SRAM) cell is proposed in 55 nm CMOS technology. Based on polarity reversal design and read/write separation structure, the proposed HSLC12T cell can recover from any single event upsets (SEUs) induced at all its sensitive nodes and even single event double‐node‐upsets (SEDNUs) induced at its internal storage node pair Q‐QN, while also having the maximum read static noise margin (RSNM) and lower static hold power, as well as excellent write speed and write‐ability. Though the HSLC12T cell exhibits a larger read delay, it has the best overall performance of all other cells. This is proven by having the highest electrical quality metric (EQM) value, thus making the proposed HSLC12T cell a better choice for aerospace applications.

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Quadruple and Sextuple Cross-Coupled SRAM Cell Designs With Optimized Overhead for Reliable Applications

Cited by 40 publications

References 38 publications

Power management of harmonic polluted active distribution network in the presence of integrated unit of electric spring and electric vehicles parking lot

Power management of harmonic polluted active distribution network in the presence of integrated unit of electric spring and electric vehicles parking lot

A 14T radiation hardened SRAM for space applications with high reliability

A highly stable and low‐cost 12T radiation hardened SRAM cell design for aerospace application

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