2018
DOI: 10.3390/app8101842
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Quality-Improved GaN Epitaxial Layers Grown on Striped Patterned Sapphire Substrates Ablated by Femtosecond Laser

Abstract: In this work, we propose a new approach to create striped patterned sapphire substrate (PSS) under the circumstance that grooved patterned sapphire substrate technology exhibits more potential to reduce dislocation density in GaN (gallium nitride) epilayers. The striped grooves of patterned sapphire substrate are ablated by femtosecond laser. After the process of metal-organic chemical vapor deposition (MOCVD) method, the c-plane GaN epitaxial layers grown on striped PSS have larger crystallite size, which bri… Show more

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Cited by 11 publications
(3 citation statements)
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“…Here, a and c are the lattice constants of the crystal. The sizes of ZnO and CeO 2 crystals can be calculated by Scherer's equation [40]:…”
Section: Resultsmentioning
confidence: 99%
“…Here, a and c are the lattice constants of the crystal. The sizes of ZnO and CeO 2 crystals can be calculated by Scherer's equation [40]:…”
Section: Resultsmentioning
confidence: 99%
“…In addition, the doping of Cl − into ZnO can further alter the distance in crystal structure as well as in diffraction angle. Moreover, the crystallite size of the as-prepared samples was evaluated by Scherer's relation [50].…”
Section: Resultsmentioning
confidence: 99%
“…In addition the doping of S-Cl into ZnO can further alter the distance in crystal structure as well as in diffraction angle. Moreover, the crystallite size of the as-prepared samples was evaluated from Scherer's relation [40].…”
mentioning
confidence: 99%