Quantifying Nonradiative Recombination and Resistive Losses in Perovskite Photovoltaics: A Modified Diode Model Approach

Abstract

Pinpointing the origin of inefficiency can expedite the process of optimizing the efficiency of perovskite photovoltaics. However, it is challenging to discern and quantify the different loss pathways in a complete perovskite photovoltaic device under operational conditions. To address this challenge, we propose a modified diode model that can quantify bulk/interface defect‐assisted recombination and series/shunt resistive losses. By adopting drift‐diffusion simulation as the benchmark, we explore the physical meanings of the modified diode model parameters and evaluate the performance of the model for simulation parameters spanning many orders of magnitude. Our evaluation shows that, in most practical cases, the proposed model can accurately quantify all the aforementioned losses, and in some special cases, it is possible to identify the predominant loss pathway. Moreover, we apply the modified diode model to our lab‐produced devices (based on Cs0.05FA0.95PbI3 perovskites), demonstrating its effectiveness in quantifying entangled losses in practice. Finally, we provide a set of guidelines for applying the modified diode model and interpreting the results.This article is protected by copyright. All rights reserved.