Quantitative study of the transmission of axially channeled protons in thin silicon crystals

Rosner, J.; Gibson, W. M.; Golovchenko, Jene Andrew; Goland, A.N.; Wegner, H. E.

doi:10.1103/physrevb.18.1066

Cited by 39 publications

(19 citation statements)

References 6 publications

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“…The 53 for 1 = 1, 2 and 3 respectively, and our calculations with the 3-term Molitre type fit (38) confirm these values. This is to be compared with the values of Z = 5, 21 and 58 for the appearance of p , d and,fshells respectively in the periodic table.…”

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confidence: 87%

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The effects of defects on charged particle propagation in crystalline solids

Pathak

1982

Radiation Effects

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To cite this article: P. Pathak (1982) The effects of defects on charged particle propagation in crystalline solids, Radiation Effects, 61:1-2, 1-46,The defects present in solid materials generally have important effects on the electronic, structural, thermal, mechanical and other properties of these solids; a knowledge of these is essential from any application viewpoint. Recently ion implantation has been recognized to be an extremely versatile technique for controlling any of these properties, either by doping desired foreign atoms in the solids or by producing a known and controlled amount of damage, or both. For a complete understanding and successful application of these phenomena, a thorough knowledge of the interaction of propagating charged particles with the defects, and of the resulting damage, is required. The present state of understanding and the work done so far on this subject are reviewed in this article and the need for and direction of further work are pointed out. ).Dr. Pathak's research interests include classical and quantum theories of ion-solid interactions in perfect and radiation damaged solids including energy loss theories, electronic properties of pure and defective solids and the theory of ion implantation and channeling radiation.

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confidence: 87%

“…on channeling or with attempts to study the detailed behaviour of transmitted patterns involving the solution of Boltzmann transport equation. 38 The mathematical approximation of the planar potential was justified by showing that this corresponds to the physically understandable interatomic p0tentia1~7,~~ given by…”

Section: Theory Of' Channelingmentioning

confidence: 99%

The effects of defects on charged particle propagation in crystalline solids

Pathak

1982

Radiation Effects

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“…3͑b͒-3͑d͒ the diameter of the doughnut distribution increases linearly with tilt angle and the azimuthal intensity distribution becomes progressively more peaked in the direction of the beam axis, as was observed by Rosner, et al for the ͓110͔ axis. 16 In Fig. 3͑e͒ and 3͑f͒, the crystal tilt angle away from the beam axis is equal to, or greater than, the axial characteristic channeling angle, and there is virtually no beam emerging within the ͑110͒ planes above the ͓100͔ axis.…”

Section: Simulation Of Channeling Patterns Through Rotated Bilayersmentioning

confidence: 93%

“…The structure of these doughnut distributions has been characterized by Rosner et al using 3.2 MeV protons transmitted close to the silicon ͓110͔ axis through crystals which were 200-700 nm thick. 16 It was noted that the angular extent of these doughnuts was proportional to the tilt angle of the ͓110͔ axis away from the beam axis, for tilt angles less than the axial channeling critical angle. It was also noted that the azimuthal intensity of these doughnut distributions was nonuniform and reflected the crystal symmetry caused by the major channeling planes crossing at the crystal axis.…”

Section: B Aims Of This Workmentioning

confidence: 99%

Characterization of strain in crystal bilayers using ion-channeling patterns

1996

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This paper describes the experimental and theoretical simulation, the observation and the quantification of strain present in crystal bilayers using ion-channeling patterns produced by a focused 3 MeV proton beam. The dechanneling effects of strain are first experimentally simulated using different rotation angles between two individual, 0.3-m-thick, ͓100͔ silicon crystals. The patterns produced when both crystals are aligned close to the ͓100͔ axis, with a small rotation angle at the interface, are considered in detail using Monte Carlo computer simulations. Previously unobserved effects occurring in channeling patterns are discussed and general conditions under which different behavior is observed are described. Channeling patterns recorded through a thinned Si 0.85 Ge 0.15 /Si crystal bilayer are then used to characterize the interface rotation angle along several off-normal axes.

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“…The changes in P reflect variations of the flux distribution of the ions, which depend on the time that the ion remains channeled in the layer. [16][17][18] Since this time is also controlled by the particle energy, the change in P can be directly correlated with it. Figure 3 shows the theoretical results for the angular shift ⌬␣ obtained from MC simulations in comparison to the experimental results.…”

mentioning

confidence: 99%

Breakdown of anomalous channeling with ion energy for accurate strain determination in GaN-based heterostructures

Redondo-Cubero

Lorenz

Gago

et al. 2009

Applied Physics Letters

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Quantitative study of the transmission of axially channeled protons in thin silicon crystals

Cited by 39 publications

References 6 publications

The effects of defects on charged particle propagation in crystalline solids

The effects of defects on charged particle propagation in crystalline solids

Characterization of strain in crystal bilayers using ion-channeling patterns

Breakdown of anomalous channeling with ion energy for accurate strain determination in GaN-based heterostructures

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