Quantum conductance in double-wall carbon nanotubes grown by chemical vapor deposition

Abstract

The electronic conductance of networks of chemical vapor deposition grown double-wall carbon nanotubes comprising two populations of inner-and outer-wall diameter was measured by mechanically controllable break-junction methods. Two discrete conductances, 0.24G 0 and 0.91G 0 ͑G 0 =2e 2 / h͒, with nonideal corresponding transmission coefficients of 0.12 and 0.45, respectively, were identified as those of the lowest-energy metallic subbands in outer walls. High-bias injection was dominated by two discrete conductance values for a wide range of excitation energy.