Quantum Ensemble Monte Carlo simulation of silicon-based nanodevices

Sampedro, Carlos; Gámiz, F.; Godoy, A.; Jiménez-Molinos, F.

doi:10.1007/s10825-006-0052-3

Cited by 3 publications

(1 citation statement)

References 4 publications

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“…Different approaches from classical to full quantum can be considered depending on the needed accuracy, the computational resources and time available to perform the simulations. For the study of ultrashort channel devices, semi-classical approaches should not be used since confinements effects are of special importance 17 . At the opposite end of the spectrum, full quantum simulators based on numerical solutions of the Schrödinger equation or the Non-Equilibrium Green's Functions theory (NEGF) have also been developed 18 .…”

Section: Introductionmentioning

confidence: 99%

MONTE-CARLO SIMULATION OF ULTRA-THIN FILM SILICON-ON-INSULATOR MOSFETs

Gámiz

Sampedro

Donetti

et al. 2014

Selected Topics in Electronics and Systems

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State-of-the-Art devices are approaching to the performance limit of traditional MOSFET as the critical dimensions are shrunk. Ultrathin fully depleted Silicon-on-Insulator transistors and multigate devices based on SOI technology are the best candidates to become a standard solution to overcome the problems arising from such aggressive scaling. Moreover, the flexibility of SOI wafers and processes allows the use of different channel materials, substrate orientations and layer thicknesses to enhance the performance of CMOS circuits. From the point of view of simulation, these devices pose a significant challenge. Simulations tools have to include quantum effects in the whole structure to correctly describe the behavior of these devices. The Multi-Subband Monte Carlo (MSB-MC) approach constitutes today's most accurate method for the study of nanodevices with important applications to SOI devices. After reviewing the main basis of MSB-MC method, we have applied it to answer important questions which remain open regarding ultimate SOI devices. In the first part of the chapter we present a thorough study of the impact of different Buried OXide (BOX) configurations on the scaling of extremely thin fully depleted SOI devices using a Multi-Subband Ensemble Monte Carlo simulator (MS-EMC). Standard thick BOX, ultra thin BOX (UTBOX) and UTBOX with ground plane (UTBOX+GP) solutions have been considered in order to check their influence on short channel effects (SCEs). The simulations show that the main limiting factor for downscaling is the DIBL and the UTBOX+GP configuration is the only valid one to downscale SGSOI transistors beyond 20 nm channel length keeping the silicon slab thickness above the theoretical limit of 5 nm, where thickness variability and mobility reduction would play an important role. In the second part, we have used the multisubband Ensemble Monte Carlo simulator to study the electron transport in ultrashort DGSOI devices with different confinement and transport directions. Our simulation results show that transport effective mass, and subband redistribution are the main factors that affect drift and scattering processes and, therefore, the general performance of DGSOI devices when orientation is changed

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Section: Introductionmentioning

confidence: 99%

MONTE-CARLO SIMULATION OF ULTRA-THIN FILM SILICON-ON-INSULATOR MOSFETs

Gámiz

Sampedro

Donetti

et al. 2014

Selected Topics in Electronics and Systems

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show abstract

Remote surface roughness effects on inversion electron density in nano-MOSFET

Wang

Mao

2009

Eur. Phys. J. Appl. Phys.

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MONTE-CARLO SIMULATION OF ULTRA-THIN FILM SILICON-ON-INSULATOR MOSFETs

Gámiz

Sampedro

Donetti

et al. 2013

Int. J. Hi. Spe. Ele. Syst.

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State-of-the-Art devices are approaching to the performance limit of traditional MOSFET as the critical dimensions are shrunk. Ultrathin fully depleted Silicon-on-Insulator transistors and multi-gate devices based on SOI technology are the best candidates to become a standard solution to overcome the problems arising from such aggressive scaling. Moreover, the flexibility of SOI wafers and processes allows the use of different channel materials, substrate orientations and layer thicknesses to enhance the performance of CMOS circuits. From the point of view of simulation, these devices pose a significant challenge. Simulations tools have to include quantum effects in the whole structure to correctly describe the behavior of these devices. The Multi-Subband Monte Carlo (MSB-MC) approach constitutes today's most accurate method for the study of nanodevices with important applications to SOI devices. After reviewing the main basis of MSB-MC method, we have applied it to answer important questions which remain open regarding ultimate SOI devices. In the first part of the chapter we present a thorough study of the impact of different Buried OXide (BOX) configurations on the scaling of extremely thin fully depleted SOI devices using a Multi-Subband Ensemble Monte Carlo simulator (MS-EMC). Standard thick BOX, ultra thin BOX (UTBOX) and UTBOX with ground plane (UTBOX+GP) solutions have been considered in order to check their influence on short channel effects (SCEs). The simulations show that the main limiting factor for downscaling is the DIBL and the UTBOX+GP configuration is the only valid one to downscale SGSOI transistors beyond 20 nm channel length keeping the silicon slab thickness above the theoretical limit of 5 nm, where thickness variability and mobility reduction would play an important role. In the second part, we have used the multisubband Ensemble Monte Carlo simulator to study the electron transport in ultrashort DGSOI devices with different confinement and transport directions. Our simulation results show that transport effective mass, and subband redistribution are the main factors that affect drift and scattering processes and, therefore, the general performance of DGSOI devices when orientation is changed

show abstract

Quantum Ensemble Monte Carlo simulation of silicon-based nanodevices

Cited by 3 publications

References 4 publications

MONTE-CARLO SIMULATION OF ULTRA-THIN FILM SILICON-ON-INSULATOR MOSFETs

MONTE-CARLO SIMULATION OF ULTRA-THIN FILM SILICON-ON-INSULATOR MOSFETs

Remote surface roughness effects on inversion electron density in nano-MOSFET

MONTE-CARLO SIMULATION OF ULTRA-THIN FILM SILICON-ON-INSULATOR MOSFETs

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