Quantum Hall resistance overshoot in two-dimensional (2D) electron gases: theory and experiment

Sailer, Juergen; Wild, Andreas; Lang, Volker; Siddiki, A.; Bougeard, Dominique

doi:10.1088/1367-2630/12/11/113033

Cited by 16 publications

(38 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The amplitude of the overshoot effect increases at elevated temperatures, but decreases with increasing excitation current at a fixed temperature (of 750 mK, inset). Interestingly, these experimental findings are in clear contrast to literature expectations12, but in agreement with the screening theory as elucidated below. Note that we ruled out sample dependencies and the effect of a trivial contact resistance by careful comparison of measurements before and after illumination, by performing several cool downs and by testing various contact configurations.…”

Section: Resultssupporting

confidence: 90%

“…Later, the overshoot effect was attributed to the decoupling of the spin-split states within the same LL at odd filling factors by Richter and Wheeler5, or, alternatively by the scattering between edge states together with spin-orbit interaction by Komiyama and Nii6. Recently, the overshoot effect has been investigated in Si/SiGe heterostructures as a function of current and temperature12. These experimental results have been elegantly explained within the screening theory of the integer quantized Hall effect, which explicitly takes into account the direct Coulomb interaction between charge carriers.…”

mentioning

confidence: 99%

“…A detailed theoretical explanation of the overshoot effect within the screening theory is provided in Ref. 12 and 15 taking into account finite size and temperature effects. In particular, Ref.…”

mentioning

confidence: 99%

“…This process results in the transition regions between subsequent Hall plateaus. For we call an incompressible strip evanescent12. The scattering model predicts the overshoot effect to occur if at least two evanescent incompressible strips with consecutive filling factors co-exist: .…”

mentioning

confidence: 99%

See 3 more Smart Citations

Anomalous resistance overshoot in the integer quantum Hall effect

Kendirlik

Sirt

Kalkan

et al. 2013

Sci Rep

View full text Add to dashboard Cite

In this work we report on experiments performed on smooth edge-narrow Hall bars. The magneto-transport properties of intermediate mobility two-dimensional electron systems are investigated and analyzed within the screening theory of the integer quantized Hall effect. We observe a non-monotonic increase of Hall resistance at the low magnetic field ends of the quantized plateaus, known as the overshoot effect. Unexpectedly, for Hall bars that are defined by shallow chemical etching the overshoot effect becomes more pronounced at elevated temperatures. We observe the overshoot effect at odd and even integer plateaus, which favor a spin independent explanation, in contrast to discussion in the literature. In a second set of the experiments, we investigate the overshoot effect in gate defined Hall bar and explicitly show that the amplitude of the overshoot effect can be directly controlled by gate voltages. We offer a comprehensive explanation based on scattering between evanescent incompressible channels.T he overwhelming interest to utilize quantum mechanics in applied technologies finds one of its first manifestations in the integer quantized Hall effect (IQHE) 1 . The magnetic field dependence of the transport coefficients of a two dimensional electron system (2DES) provides a possibility to standardize resistance in units of the von Klitzing constant h/e 2 , where h is the Planck constant and e is the elementary charge. However, an unexpected non-monotonic magnetic field dependence of the Hall resistance at the low-field-end of the quantized plateaus, known as the overshoot effect, remains a puzzle despite of both theoretical and experimental efforts in various material systems including GaAs/AlGaAs heterostructure 2-6 as well as Si/SiGe 7-13 and Si metal oxide semiconductor field effect transistors 14 . The utilization of the quantized Hall effect as a resistance standard is hindered by such anomalies, especially because their physical mechanism is not well understood. The overshoot effect is observed in these material systems at various filling factors n, defined by the number of occupied quantized (spin resolved) Landau levels (LL) below the Fermi energy. The effect has already been observed in the 1980's, where its physical mechanism was attributed to non-ideal contacts 2-4 , but without providing clear evidence for this hypothesis. Later, the overshoot effect was attributed to the decoupling of the spin-split states within the same LL at odd filling factors by Richter and Wheeler 5 , or, alternatively by the scattering between edge states together with spin-orbit interaction by Komiyama and Nii 6 . Recently, the overshoot effect has been investigated in Si/SiGe heterostructures as a function of current and temperature 12 . These experimental results have been elegantly explained within the screening theory of the integer quantized Hall effect, which explicitly takes into account the direct Coulomb interaction between charge carriers. In this approach the overshoot effect is described using co-existing (curr...

show abstract

Section: Resultssupporting

confidence: 90%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

Anomalous resistance overshoot in the integer quantum Hall effect

Kendirlik

Sirt

Kalkan

et al. 2013

Sci Rep

View full text Add to dashboard Cite

show abstract

“…The same argument holds also for other filling factors at different field values. Therefore we should not threat incompressible strips as an insulator, since, when W k .λ T 1, the strip is no longer incompressible thermodynamically [20,21,22].…”

Section: Electron Density Profile Incompressible Strips and Capacitamentioning

confidence: 99%

A realistic quantum capacitance model for quantum Hall edge state based Fabry–Pérot interferometers

Kılıcoglu

Eksi

Siddiki

2016

J. Phys.: Condens. Matter

Self Cite

View full text Add to dashboard Cite

Abstract.In this work, the classical and the quantum capacitances are calculated for a FabryPérot interferometer operating in the integer quantized Hall regime. We first consider a rotationally symmetric electrostatic confinement potential and obtain the widths and the spatial distribution of the insulating (incompressible) circular strips using a charge density profile stemming from self-consistent calculations. Modelling the electrical circuit of capacitors composed of metallic gates and incompressible/compressible strips, we investigate the conditions to observe Aharonov-Bohm (quantum mechanical phase dependent) and Coulomb Blockade (capacitive coupling dependent) effects reflected in conductance oscillations. In a last step, we solve the Schrödinger and the Poisson equations self-consistently in a numerical manner taking into account realistic experimental geometries. We find that, describing the conductance oscillations either by Aharanov-Bohm or Coulomb Blockade strongly depends on sample properties also other than size, therefore, determining the origin of these oscillations requires further experimental and theoretical investigation.

show abstract

Classical and quantum capacitances calculated locally considering a two-dimensional Hall bar

Guvenilir

Kılıcoglu

Eksi

et al. 2019

Physica E: Low-dimensional Systems and Nanostructures

View full text Add to dashboard Cite

In this work we investigate the electrostatic properties of two dimensional electron system (2DES) in the integer quantum Hall regime. The alternating screening properties of compressible and incompressible strips are formed due to edge effects together with electron-electron interactions. As it is well known, the Landau quantization emanates from strong perpendicular magnetic fields. The (Landau) energy levels are broadened due to impurities, which we embedded their effects in density of states (DOS). In a basic level DOS has two different forms: the Gaussian and semi-elliptic descriptions. The second form is calculated within the self consistent Born approximation (SCBA). Having in hand the density of states, we obtain both the longitudinal and Hall (transversal) conductivities (σ l , σ H ) utilizing Thomas-Fermi-Poisson approximation to calculate position dependent charge density profile and use Drude formalism to obtain transport coefficients. Since, the definition of capacitance is closely related with compressibility via DOS, (local) screening properties of 2DES is extremely important to understand local capacitances. Here we numerically simulate a translational invariant Hall bar subject to high magnetic fields which is perpendicular to the plane of the 2DES using realistic parameters extracted from the related experiments. Using the above mentioned approaches the local capacitances are calculated, numerically. Our findings are in perfect agreement with related experimental results which are based on a dynamic scanning capacitance microscopy technique.

show abstract

Quantum Hall resistance overshoot in two-dimensional (2D) electron gases: theory and experiment

Cited by 16 publications

References 37 publications

Anomalous resistance overshoot in the integer quantum Hall effect

Anomalous resistance overshoot in the integer quantum Hall effect

A realistic quantum capacitance model for quantum Hall edge state based Fabry–Pérot interferometers

Classical and quantum capacitances calculated locally considering a two-dimensional Hall bar

Contact Info

Product

Resources

About