Radiation-stimulated changes in the transmission of chalcogenide glasses of As2S3−Ge2S3

On the origin of radiation-induced metastability in vitreous chalcogenide semiconductors: The role of intrinsic and impurity-related destruction-polymerization transformations

“…In this view, the reference on Ge-As-S system as free of products of radiation-induced oxidation and, consequently, more suitable to study own structural changes, which was declared in [10], is a simple misunderstanding. The VChS of this Ge-As-S system also demonstrate a pronounced response on prolonged γ-irradiation with various doses (0.1…10.0 MGy) dependent, in main, on As 2 S 3 content, especially within GeS 2 -As 2 S 3 cut-section [35][36][37][38][39] (if slighter topological variations near average coordination 2.67 within Ge 2 S 3 -As 2 S 3 cut-section are neglected). White arsenolite layer on the surface of just γ-irradiated Ge-As-S glasses was always detected in our experiments [35][36][37][38][39], it was always carefully eliminated before further optical measurements.…”

“…The VChS of this Ge-As-S system also demonstrate a pronounced response on prolonged γ-irradiation with various doses (0.1…10.0 MGy) dependent, in main, on As 2 S 3 content, especially within GeS 2 -As 2 S 3 cut-section [35][36][37][38][39] (if slighter topological variations near average coordination 2.67 within Ge 2 S 3 -As 2 S 3 cut-section are neglected). White arsenolite layer on the surface of just γ-irradiated Ge-As-S glasses was always detected in our experiments [35][36][37][38][39], it was always carefully eliminated before further optical measurements. It seems also important to note that oxidation is not related alone to the absorbed dose of irradiation, since environmental conditions, especially water moisture, act as catalyst in this process [27].…”

Long-term radiation-induced optical darkening effects in chalcogenide glasses

“…RIOEs could be also considered as the main control parameter of radiation sensitivity of ChGs. It has been established on the example of Ge-As-S [3] and Ge-Sb-S [4] systems that the total RIOEs consist of two components: the dynamic component that relaxes for 2-3 months after γ-irradiation and static one that remains stable for a long period of time after γ-irradiation.…”

“…But, as mentioned above, it has been experimentally established [3,4] that the RIOE's dynamic component is only 2 to 3 months and RIOE's static component takes place for a long period after γ-irradiation. However, the question "how long RIOE's static component would be existed?"…”

“…1, curves 1 and 2). Taking into account the dynamic RIOE component on the level of ∼5% [3,4], it means that the RIOE's static component may exist for a long period, perhaps more than 10 years. It may also indicate that a backward measuring chronology mentioned by the authors [10], it is not necessary to be performed, being although useful to make in situ experiment, as the radiation-induced optical darkening effects in chalcogenide glasses are stable in time, and corresponding radiation-induced structural changes can be correctly investigated with a long-time interval.…”