Radiative Recombination at Centres in Germanium–Silicon Solid Solutions

Lyutovich, A.; Lyutovich, K.; Popov, V.; Safronov, L. N.

doi:10.1002/pssb.2221290131

Cited by 7 publications

(1 citation statement)

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“…Along with fundamental investigations of the radiative recombination dislocations, 4 localized excitons, 5,6 and radiation defects, 3 have been investigated. Thus, Si 1Ϫx Ge x is an ideal material to study alloy effects, e.g., effects of alloy fluctuations and change of impurity levels with alloy composition.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence and photoconductivity of Si- and Ge-rich SiGe bulk crystals

Franz

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We have investigated Si-(0рxр0.13) and Ge-rich (0.90рxр1) Si 1Ϫx Ge x bulk crystals by photoluminescence and photoconductivity measurements. The small linewidths of the near band edge luminescence of less than 4 meV demonstrate the high quality of the crystals. Luminescence linewidth, line shape, and intensity ratios of transitions with and without phonon participation reveal a stronger influence of alloy effects on excitons on the Ge-rich side compared with the Si-rich side. Photoconductivity spectra of boron doped Si-rich and phosphorus doped Ge-rich Si 1Ϫx Ge x crystals show the influence of alloy composition and alloy fluctuations on the impurity levels. The shift of the photoconductivity spectra with increasing Si or Ge concentration indicates the change of the ground state energy of the impurity with changing alloy composition.

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Section: Introductionmentioning

confidence: 99%