Radio frequency and signal integrity parameters for GaN MMIC

Abstract

The paper describes challenges and proposed guidelines for design of optimal layout solution of transistors and interconnections for GaN transistors in terms of providing best RF and SI parameters. For frequencies up to 60 GHz GaN transistors as a part of MMIC provide power density to the extent of 10 W/mm, but thorough choice of technologies and design of schematics, layout, interconnections, and package is crucial. Matching and decoupling between different parts of devices require using better methods of providing SI. The necessity of taking into account S-parameters and reflection coefficients motivated the employing of combination of structural, schematic, and layout adaptation methods including predistortion, which as a result allow compensating the degradation in characteristics of GaN power amplifiers up to 70 %.