Radiomeasuring pressure transducer with sensitive MEMS capacitor

Осадчук, В. С.; Osadchuk, L. A.; Kisała, Piotr; Zyska, Tomasz; Annabaev, A.; Mussabekov, Kanat

doi:10.15199/48.2017.03.26

Cited by 3 publications

(2 citation statements)

References 3 publications

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“…The change in the energy of the electrons of the diode under the action of pressure changes the form of the current-voltage characteristic. This, in turn, leads to the change of the frequency of electrical oscillations in the pressure sensor [14].…”

Section: Pressure Sensor Mathematical Modelmentioning

confidence: 99%

Mathematical model of a frequency pressure transducer based on a resonant tunneling diode

Osadchuk

Осадчук

2022

Phys. Chem. Solid St.

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The paper presents the design of pressure sensor with a frequency output signal that is based on the physical processes in a resonant tunnel diode under the action of pressure. The use of devices with negative differential resistance can significantly simplify the design of pressure sensors in the entire radio frequency range. Depending on the operating modes of the sensor, an output signal can be obtained in the form of harmonic oscillations. Pressure sensor characteristics researches based on complete equivalent circuit diagram resonant tunnel diode, which takes into account its capacitive and inductive properties. A mathematical model of the pressure sensor was developed, upon which the analytical dependences of the change in the elements tunnel resonance diode from pressure have been determined, as well as conversion functions and sensor sensitivity. It is shown that the main contribution to changes in the conversion function and sensor sensitivity is made by the change in the negative differential resistance with the change in pressure. This, in turn, results in different readings of the instrument's output frequency. The sensitivity of the sensor varied from 1.15 kHz/Pa·105 to 14.16 kHz/Pa·105 in the pressure range from 50·105 Pa up to 350·105 Pa.

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Section: Pressure Sensor Mathematical Modelmentioning

confidence: 99%

Mathematical model of a frequency pressure transducer based on a resonant tunneling diode

Osadchuk

Осадчук

2022

Phys. Chem. Solid St.

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“…It is established that the technical level of sensory systems of physical quantities depends primarily on the technical development of the transducer, namely its sensitive elements, design solution, principle of operation and manufacturing technology [1,9,14,17]. This motivates for the implementation of further research.…”

Section: Technological Aspectsmentioning

confidence: 99%

Mathematical Simulation of a Microelectronic Transducer With Frequency Output for Measuring the Induction of the Magnetic Field

Osadchuk

Осадчук

Martyniuk

et al. 2022

IAPGOS

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A new magnetically sensitive element based on the synthesized semiconductor material has been developed. A method for the synthesis of a complex compound has been developed tetrakis-µ3-(methoxo) (methanol)-pentakis (acetylacetonate) (tricuprum (II), neodymium (III)) methanol (I). The scheme of arrangement of chemical bonds for this complex compound is offered. Conducted properties have been studied tetrakis-µ3-(methoxo) (methanol)-pentakis (acetylacetonate) (tricuprum (II), neodymium (III)) methanol (I) in compressed form in the temperature range 273 - 493 K showed that conductivity varies from 5.67 ∙ 10-14 (Ohm ∙ m)-1 at a temperature of 273 K to 1.06 (Ohm∙m)-1 at a temperature of 493 K. The experiment showed that in the temperature range 303 - 423 K resistivity of the pressed sample of the test material of compound (I) decreases from 2∙1010 Ohm∙m to 5 ∙ 102 Ohm∙m, ie the isolated compound is a semiconductor. In the developed magnetoresistor when changing the induction of the magnetic field from 10-3 to 200 mT, the resistivity varies from 3.12∙10-5 Ohm to 1.25∙10-2 Ohm∙m, and from 200 mT to 1 T, the resistivity varies from1.25∙10-2 Ohm to 0.3 Ohm. On the basis of the developed magnetically sensitive resistive element the circuit solution of the frequency transducer of a magnetic field is offered. The frequency transducer of the magnetic field is a hybrid integrated circuit consisting of a bipolar transistor and a gate gate transistor, which creates the preconditions for the creation of an autogenerator device, the feedback circuit of which includes a magnetically sensitive resistor based on tetrakis-µ3- (methoxo) (methanol)-pentakis (acetylacetonate) (tricuprum (II), neodymium (III)) methanol (I).The frequency of generation of the developed transducer increases the most in the range from 10-3 T to 0.2 T, and at a supply voltage of 5.0 V varies from 250 kHz to 600 kHz, and in the whole range of changes in magnetic field induction varies from 250 kHz to 750 kHz. The sensitivity of the developed device with frequency output for measuring the induction of the magnetic field is from 400 Hz/mT to 800 Hz/mT.

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Optical Sensor with Frequency Output Based on Resonant Tunneling Diode

Osadchuk

Семенов

2022

2022 IEEE 16th International Conference on Advanced Trends in Radioelectronics, Telecommunications and Computer Engineering (TC

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Radiomeasuring pressure transducer with sensitive MEMS capacitor

Cited by 3 publications

References 3 publications

Mathematical model of a frequency pressure transducer based on a resonant tunneling diode

Mathematical model of a frequency pressure transducer based on a resonant tunneling diode

Mathematical Simulation of a Microelectronic Transducer With Frequency Output for Measuring the Induction of the Magnetic Field

Optical Sensor with Frequency Output Based on Resonant Tunneling Diode

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