Raman scattering characterization of the crystalline qualities of ZnSe films grown on S-passivated GaAs(100) substrates

Wang, J.; Liu, X. H.; Li, Z. S.; Su, Run; Ling, Zhihong; Cai, Wangfeng; Hou, Xiaoyuan; Wang, Xun

doi:10.1063/1.115072

Cited by 15 publications

(4 citation statements)

References 13 publications

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“…Since the spectra could not fit with only the CZTS and CZTSe peaks, we conclude that secondary phases are present, indicated by the peaks at 250 cm -1 , 276 cm -1 and 352 cm -1 . These phases are identified as ZnSe (253 cm -1 ) [10] and ZnS (271 cm -1 , 352 cm -1 ) [11].…”

Section: Discussionmentioning

confidence: 99%

Cu2ZnSn(S,Se)4 from CuxSnSy nanoparticle precursors on ZnO nanorod arrays

et al. 2013

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Solar cells with Cu 2 ZnSnS 4 absorber thin films have a potential for high energy conversion efficiencies with earth-abundant and non-toxic elements. In this work the formation of CZTSSe from Cu x SnS y nanoparticles (NPs) deposited on ZnO nanorod (NR) arrays as precursors for zinc is investigated. The NPs are prepared using a chemical route and are dispersed in toluene. The ZnO NRs are grown on fluorine doped SnO 2 coated glass substrates by electro deposition method. A series of samples are annealed at different temperatures between 300 °C and 550 °C in selenium containing argon atmosphere. To investigate the products of the reaction between the precursors the series is analyzed by means of x-ray diffraction (XRD) and Raman spectroscopy. The morphology is recorded by scanning electron microscopy (SEM) images of broken cross sections. The XRD measurements and the SEM images show the disappearing of ZnO NRs with increasing annealing temperature. Simultaneously the XRD and Raman measurements show the formation of CZTSSe. The formation of secondary phases and the optimum conditions for the preparation of CZTSSe is discussed.

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Section: Discussionmentioning

confidence: 99%

Cu2ZnSn(S,Se)4 from CuxSnSy nanoparticle precursors on ZnO nanorod arrays

et al. 2013

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“…It's found that using S 2 Cl 2 as a passivation solution for ZnSe/GaAs has better crystalline quality compare to the (NH 4 ) 2 S x due to the longer process time. The Raman spectra of ZnSe/GaAs also showed peak at 205, 253 cm -1 for ZnSe and 268, 291 cm -1 for GaAs [5]. The high quality of crystalline can be achieved when the temperature is higher than 475 o C for chromium dope ZnSe film deposited on sapphire [4].…”

Section: Introductionmentioning

confidence: 91%

Ab initio calculation of vibrational frequencies of ZnSe and the Raman spectra

Rosli

Zabidi

Kassim

2014

AIP Conference Proceedings

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Articles you may be interested inMicrowave, infrared and Raman spectra, r0 structural parameters, ab initio calculations and vibrational assignment of 1-fluoro-1-silacyclopentanea) J. Chem. Phys. 136, 044306 (2012); 10.1063/1.3673889 Prediction of vibrational frequencies of possible intermediates and side products of the methanol synthesis on ZnO( 000 1 ¯ ) by ab initio calculations Abstract. The single layer of ZnSe has been studied to understand the structure using density functional theory. The vibrational frequencies of several cluster of ZnSe have been calculated when the Kohn-Sham equation solved at the ground state energy. We have done the calculation for 34 models of ZnSe clusters but only the stable molecules will be discussed. The bond length, Fermi energy and binding energy of ZnSe clusters have been calculated. The experimental result of single layer of ZnSe shown by Nesheva et. al. using different thickness of layers until 1µm [1]. The Raman spectra of ZnSe shown several peak for different thickness. In this paper, we will show the comparison of our calculated result with the experimental Raman spectra to show the existent of cluster.

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“…When the excited light penetrates deeper than the thickness of the depletion layer, LOPC mode will be measured. Therefore, an effective passivation can cause a decrease in the LO peak intensity and an increase of the LOPC peak intensity [15][16][17]. In order to further demonstrate the effect of ODT passivation, especially the stability of air exposure, we prepared three groups of samples for Raman spectral analysis: unpassivated, ODT passivated and exposure in air for 3 days after ODT passivation respectively, as shown in Figure 2ac.…”

Section: Introductionmentioning

confidence: 99%

“…When the excited light penetrates deeper than the thickness of the depletion layer, LOPC mode will be measured. Therefore, an effective passivation can cause a decrease in the LO peak intensity and an increase of the LOPC peak intensity [15][16][17]. It can be seen from Figure 2 that the passivation changed the balance between the LOPC (265 cm −1 ) peak and the LO (288 cm −1 ) peak.…”

Section: Introductionmentioning

confidence: 99%

Property Improvement of GaAs Surface by 1-Octadecanethiol Passivation

et al. 2019

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In this study the effects of 1-Octadecanethiol (ODT, 1-CH3 [CH2]17SH) passivation on GaAs (100) surface and GaAs/Al2O3 MOS capacitors are investigated. The results measured by X-ray photoelectric spectroscopy (XPS), Raman spectroscopy and scan electron microscopy (SEM) show that the ODT passivation can obviously suppress the formation of As-O bonds and Ga-O bonds on the GaAs surface and produce good surface morphology at the same time, and especially provide better protection against environmental degradation for at least 24 h. The passivation time is optimized by photoluminescence (PL), and the maximum enhancement of PL intensity was 116%. Finally, electrical property of a lower leakage current was measured using the metal-oxide-semiconductor capacitor (MOSCAP) method. The results confirm the effectiveness of ODT passivation on GaAs (100) surface.

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Raman scattering characterization of the crystalline qualities of ZnSe films grown on S-passivated GaAs(100) substrates

Cited by 15 publications

References 13 publications

Cu2ZnSn(S,Se)4 from CuxSnSy nanoparticle precursors on ZnO nanorod arrays

Cu2ZnSn(S,Se)4 from CuxSnSy nanoparticle precursors on ZnO nanorod arrays

Ab initio calculation of vibrational frequencies of ZnSe and the Raman spectra

Property Improvement of GaAs Surface by 1-Octadecanethiol Passivation

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