Raman scattering in In2Se3 and InSe2 amorphous films

Weszka, J.; Daniel, Ph.; Burian, A.; Nguyen, Alexander

doi:10.1016/s0022-3093(99)00710-3

Cited by 110 publications

(66 citation statements)

References 22 publications

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“…The broadened peaks of the 125 ± 5 and 228 ± 5 cm −1 modes had been observed in an amorphous In 40 Se 60 thin film deposited on a glass substrate. The two modes are closely related to the γ phase of In 2 Se 3 16, and the 150 cm −1 feature is related to the zone center mode of the γ-In 2 Se 3 crystal17. The other 183 ± 4 cm −1 peak was determined to be a characteristic mode for γ-In 2 Se 3 1819.…”

Section: Resultsmentioning

confidence: 87%

Amorphous effect on the advancing of wide-range absorption and structural-phase transition in γ-In2Se3 polycrystalline layers

2014

Sci Rep

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The exploitation of potential functions in material is crucial in materials research. In this study, we demonstrate a III-VI chalcogenide, polycrystalline γ-In2Se3, which simultaneously possesses the capabilities of thickness-dependent optical gaps and wide-energy-range absorption existed in the polycrystalline layers of γ-In2Se3. Transmission electron microscopy and Raman measurement show a lot of γ-phase nanocrystals contained in the disordered and polycrystalline state of the chalcogenide with medium-range order (MRO). The MRO effects on the γ-In2Se3 layers show thickness-dependent absorption-edge shift and thickness-dependent resistivities. The amorphous effect of MRO also renders a structural-phase transition of γ → α occurred inside the γ-In2Se3 layer with a heat treatment of about 700°C. Photo-voltage-current (Photo V-I) measurements of different-thickness γ-In2Se3 layers propose a wide-energy-range photoelectric conversion unit ranging from visible to ultraviolet (UV) may be achieved by stacking γ-In2Se3 layers in a staircase form containing dissimilar optical gaps.

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Section: Resultsmentioning

confidence: 87%

Amorphous effect on the advancing of wide-range absorption and structural-phase transition in γ-In2Se3 polycrystalline layers

2014

Sci Rep

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“…The broadened peaks of the 125 ± 5 and 228 ± 5 cm −1 modes had ever been observed in an amorphous In 40 Se 60 thin film deposited on a glass substrate. The two modes are closely related to the ␥ phase of In 2 Se 3 [15], and the 150 cm −1 feature is related to the zone center mode of the ␥-In 2 Se 3 crystal [16]. In addition, the other 183 ± 4 cm −1 peak was determined to be a characteristic mode for ␥-phase In 2 Se 3 [17,18].…”

Section: Morphology and Structure Characterizationmentioning

confidence: 84%

Optical-memory switching and oxygen detection based on the CVT grown γ- and α-phase In2Se3

Lin

Pan

2015

Sensors and Actuators B: Chemical

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“…The peak at 205 cm −1 is strongest in films that are at about 6 nm to 9 nm thick layers and then attenuates with increase in thickness. The peak at around 155 cm −1 is distinctive for the γ phase of InSe and is related to the zone center mode of the crystal [35,36]. The Raman spectrum of the 15 nm thick Sb2Se3 thin film is shown in Figure 3b.…”

Section: Resultsmentioning

confidence: 99%

Atomic Layer Growth of InSe and Sb2Se3 Layered Semiconductors and Their Heterostructure

et al. 2017

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Abstract:Metal chalcogenides based on the C-M-M-C (C = chalcogen, M = metal) structure possess several attractive properties that can be utilized in both electrical and optical devices. We have shown that specular, large area films of γ-InSe and Sb 2 Se 3 can be grown via atomic layer deposition (ALD) at relatively low temperatures. Optical (absorption, Raman), crystalline (X-ray diffraction), and composition (XPS) properties of these films have been measured and compared to those reported for exfoliated films and have been found to be similar. Heterostructures composed of a layer of γ-InSe (intrinsically n-type) followed by a layer of Sb 2 Se 3 (intrinsically p-type) that display diode characteristics were also grown.

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Raman scattering in In2Se3 and InSe2 amorphous films

Cited by 110 publications

References 22 publications

Amorphous effect on the advancing of wide-range absorption and structural-phase transition in γ-In2Se3 polycrystalline layers

Amorphous effect on the advancing of wide-range absorption and structural-phase transition in γ-In2Se3 polycrystalline layers

Optical-memory switching and oxygen detection based on the CVT grown γ- and α-phase In2Se3

Atomic Layer Growth of InSe and Sb2Se3 Layered Semiconductors and Their Heterostructure

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