Randomly oriented ZnO nanowires grown on amorphous SiO2 by metal-catalyzed vapour deposition

Comedi, D.; Tirado, Mónica; Zapata, Cecilia; Heluani, S. P.; Villafuerte, M.; Mohseni, Parsian K.; LaPierre, Ray

doi:10.1016/j.jallcom.2009.10.070

Cited by 18 publications

(23 citation statements)

References 17 publications

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“…In all cases, NF growth was promoted by Au nano-clusters deposited on the substrates 11 . These metallic nanoislands act as catalysts for one-dimensional growth (nanowires, nanocolumns) for different systems 4,[11][12][13] . Three ZnO NFN samples (S 0 , S 1 , S 2 ) were fabricated by the vapour-transport method.…”

Section: Methodsmentioning

confidence: 99%

“…The furnace was controlled by a Honeywell DC1010 temperature controller, which allows setting different profiles of variation of temperature. The substrates were placed parallel to the tube axis at 15.7 cm and 17.9 cm distances from the furnace centre, which correspond to different temperatures: 720 °C and 600 °C respectively, due to the natural temperature gradient profile along the tube 13,15 . The quartz tube was purged with Ar until a base pressure of 250 mTorr was obtained (fixed by a small opening of the air inlet valve at maximum pumping speed) and a steady Ar flow was established by controlling the pumping speed through the vacuum valve, raising the pressure in the tube to about 1200 mTorr.…”

Section: Methodsmentioning

confidence: 99%

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Electrical, photoelectrical and morphological properties of ZnO nanofiber networks grown on SiO2 and on Si nanowires

et al. 2013

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ZnO nanofibre networks (NFNs) were grown by vapour transport method on Si-based substrates. One type of substrate was SiO 2 thermally grown on Si and another consisted of a Si wafer onto which Si nanowires (NWs) had been grown having Au nanoparticles catalysts. The ZnO-NFN morphology was observed by scanning electron microscopy on samples grown at 600 °C and 720 °C substrate temperature, while an focused ion beam was used to study the ZnO NFN/Si NWs/Si and ZnO NFN/SiO 2 interfaces. Photoluminescence, electrical conductance and photoconductance of ZnO-NFN was studied for the sample grown on SiO 2 . The photoluminescence spectra show strong peaks due to exciton recombination and lattice defects. The ZnO-NFN presents quasi-persistent photoconductivity effects and ohmic I-V characteristics which become nonlinear and hysteretic as the applied voltage is increased. The electrical conductance as a function of temperature can be described by a modified three dimensional variable hopping model with nanometer-ranged typical hopping distances.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Electrical, photoelectrical and morphological properties of ZnO nanofiber networks grown on SiO2 and on Si nanowires

et al. 2013

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“…A modified pattern could be ascribed to the amorphous polymer-contained electrode, which could serve as a base for the ZnO film sputtering without an auxiliary seed sublayer. This is also the reason for randomly oriented ZnO nanobranches grown on the amorphous substrate [25]. For the nanobranched ZnO, there is a slight shift of the highest intensity peak from 30 • toward lower angles 2θ of 27 • when compared with other ZnO nanostructures (nanowires, nanorods, etc.).…”

Section: Methodsmentioning

confidence: 98%

Characterization of Piezoelectric Microgenerator with Nanobranched ZnO Grown on a Polymer Coated Flexible Substrate

et al. 2017

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Featured Application: The application of the proposed device is for the energy-harvesting element of a flexible piezoelectric microgenerator. It could serve as a self-sufficient power supply for portable devices working in the frequency range of 10 Hz to 10 kHz, such as biomedical microsensors, tracking devices, and other wearable electronics that are mechanically activated by human motions. Abstract: In this paper, results from the fabrication and study of a piezoelectric microgenerator using nanobranched zinc oxide (ZnO) film grown on poly(3,4-ethylenedioxythiphene) doped with a sulfonate (PEDOT:PSS)-coated flexible substrate are presented. The aim of the study is to extract information about the electrical behavior of the harvester at different frequencies, temperatures, and positions, as related to the ZnO nanostructure, as well as to examine its piezoelectric response. Radiofrequency (RF) sputtering with oxygen deficit during growth on an amorphous sublayer was used to obtain the nanobranched structure. The microdevice was studied at frequencies ranging from 1 Hz to 1 MHz for temperatures in the range of −10 • C to 40 • C, in both a non-bended position, and a radius of curvature position bended to 12 mm. It was found that non-ordered ZnO nanoformations facilitate the dipoles' motion, thus leading to low dielectric losses of 10 −3 , and a higher relative permittivity of ε r~1 5, compared with typically known values. The losses increase with one order of magnitude at bending, but still remain low. Dielectric characteristics indicate that the favorable working range of the microgenerator is within the lower frequency region, from 10 Hz to 10 kHz. The results were confirmed by the measured open circuit voltage, which reaches approximately 1 V within this range, versus 300 mV out of the range.

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“…Owing to the wide band gap of 3.37 eV and the large excitation binding energy of 60 meV at room temperature, ZnO has long been recognized as an ideal material in many applications. Most nano-optoelectronic and nano-electronic devices, such as nano-LEDs, nanogenerators and nanopiezotronic devices [5][6][7][8][9][10][11], are built up of p-type ZnO nanowires. Many researchers showed interest in growing ptype ZnO nanowires but least research work was done on ntype ZnO nanowires.…”

Section: Argon Substrate Alumina Boat Withmentioning

confidence: 99%

Method to Convert a Horizontal Furnace to Grow ZnO Nanowires for Gas Sensing by the VLS Method.

Nandhyala

Haji-Sheikh

Kocanda

et al. 2014

International Journal on Smart Sensing and Intelligent Systems

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Zinc oxide (ZnO), II-VI compound semiconductor with a wide band gap (3.4ev), has a stable wurtzite structure with lattice spacing a=0.325 nm and c=0.521nm. Its properties and potential for applications in photovoltaics, LED's, spin electronics, ultraviolet light emitters, chemical sensors and transparent electronics has attracted intensive research. The objective of this thesis is to fabricate ZnO nanowires on gold coated silicon substrates using the chemical vapor transport (CVT) method. Under a constant flow of Argon gas (200mL/min), the substrates along with a mixture of ZnO and graphite powder are placed in a modified horizontal furnace which uses a 2.54 cm internally mounted quartz tube and are exposed to high temperature (527°C-1000°C) for different growth times. This reaction causes the formation of ZnO nanowires on the substrates. scanning electron microscopy is used to measure the size of the nanowires.

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Randomly oriented ZnO nanowires grown on amorphous SiO2 by metal-catalyzed vapour deposition

Cited by 18 publications

References 17 publications

Electrical, photoelectrical and morphological properties of ZnO nanofiber networks grown on SiO2 and on Si nanowires

Electrical, photoelectrical and morphological properties of ZnO nanofiber networks grown on SiO2 and on Si nanowires

Characterization of Piezoelectric Microgenerator with Nanobranched ZnO Grown on a Polymer Coated Flexible Substrate

Method to Convert a Horizontal Furnace to Grow ZnO Nanowires for Gas Sensing by the VLS Method.

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