Abstract:Carrier-concentration profiles of Si in semi-insulating GaAs have been obtained by C-V measurement techniques. Si + or Si + + ions were implanted at energies ranging from 50 to 600 keY, and annealing was carried out with Si3N4 encapsulants. Range parameters such as the projected range Xp and the projected standard deviation .:1Xp were experimentally determined by use of depths at the peak carrier concentration and at the live value of the peak carrier concentration of the profiles. It was found that .:1Xp was … Show more
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