2012
DOI: 10.1016/j.materresbull.2012.04.083
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Rapid sonochemical preparation of shape-selective lead iodide

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Cited by 4 publications
(1 citation statement)
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“…It is also a direct band gap semiconductor of 2.4 eV with room temperature p‐type conduction controlled by holes 5. Typically synthesized to a high purity by a combination of zone melting and Bridgman–Stockbarger methods,6 micro‐ and nano‐sized PbI 2 have also been produced by solution growth,7 sol–gel,8 colloidal,9 reverse‐micelle,10 sonochemical,11 vapor deposition,12 and hydrothermal methods 13. Synthesized PbI 2 is typically used in photoconductors, X‐ray detectors, and low‐energy γ‐ray detectors 4.…”
Section: Introductionmentioning
confidence: 99%
“…It is also a direct band gap semiconductor of 2.4 eV with room temperature p‐type conduction controlled by holes 5. Typically synthesized to a high purity by a combination of zone melting and Bridgman–Stockbarger methods,6 micro‐ and nano‐sized PbI 2 have also been produced by solution growth,7 sol–gel,8 colloidal,9 reverse‐micelle,10 sonochemical,11 vapor deposition,12 and hydrothermal methods 13. Synthesized PbI 2 is typically used in photoconductors, X‐ray detectors, and low‐energy γ‐ray detectors 4.…”
Section: Introductionmentioning
confidence: 99%