Rashba Effect in the Graphene/Ni(111) System

Dedkov, Yuriy; Fonin, Mikhail; Rüdiger, Ulrich; Laubschat, C.

doi:10.1103/physrevlett.100.107602

Cited by 475 publications

(433 citation statements)

References 28 publications

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“…However, the quality of EG still needs to be improved and the effects of the substrate on its properties are not well understood. In addition to the above methods, a number of studies have also reported the growth of graphene on metal substrates, such as ruthenium [32] and nickel [33], but these methods require the sample to be transferred to insulating substrates in order to make useful devices. There are also liquid phase exfoliation approaches to make graphene sheet fi lms by dispersion and exfoliation of graphite in organic solvents [13,34].…”

Section: Preparation Of Graphenementioning

confidence: 99%

Raman spectroscopy and imaging of graphene

et al. 2008

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Graphene has many unique properties that make it an ideal material for fundamental studies as well as for potential applications. Here we review recent results on the Raman spectroscopy and imaging of graphene. We show that Raman spectroscopy and imaging can be used as a quick and unambiguous method to determine the number of graphene layers. The strong Raman signal of single layer graphene compared to graphite is explained by an interference enhancement model. We have also studied the effect of substrates, the top layer deposition, the annealing process, as well as folding (stacking order) on the physical and electronic properties of graphene. Finally, Raman spectroscopy of epitaxial graphene grown on a SiC substrate is presented and strong compressive strain on epitaxial graphene is observed. The results presented here are highly relevant to the application of graphene in nano-electronic devices and help in developing a better understanding of the physical and electronic properties of graphene.

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Section: Preparation Of Graphenementioning

confidence: 99%

Raman spectroscopy and imaging of graphene

et al. 2008

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“…12 Finally t r is the strength of Rashba spinorbit coupling that has been shown to be fairly strong. 18 …”

Section: A Three Model Hamiltonianmentioning

confidence: 99%

Topological Anderson insulator phenomena

2011

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We study the nature of the disorder-induced quantized conductance, i.e., the phenomena of topological Anderson insulator (TAI) induced in HgTe/CdTe semiconductor quantum well. The disorder effect in several different systems where anomalous Hall effect exist, is numerically studied using the tight-binding Hamiltonian. It is found that the TAI phenomena also occur in the modified Dirac model where the quadratic corrections k 2 σ z is included and electron-hole symmetry is kept. It also occurs in the graphene system with the next nearestneighbor coupling and staggered sublattice potential. Comparison between the localization lengths of the 2D ribbon and 2D cylinder clearly reveals the topological nature of this phenomena. Furthermore, analysis on the local current density in anomalous quantum Hall systems where the TAI phenomena can or can not arise reveals the nature of TAI phenomena: the bulk state is killed drastically and only the robust edge state survives in a moderate disorder. When the edge state is robust enough to resist the strong disorder that can completely kills the bulk state, TAI phenomena arise.

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“…This could happen in a bilayer in contact with a strong SOC metal [31], or in a bilayer where heavy atoms or molecules have been deposited on top of one of the two layers [32].…”

Section: Spin-orbit Proximity Effectmentioning

confidence: 99%

Band topology and the quantum spin Hall effect in bilayer graphene

Prada

San-José

Brey

et al. 2011

Solid State Communications

101

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We consider bilayer graphene in the presence of spin orbit coupling, to assess its behavior as a topological insulator. The first Chern number n for the energy bands of single and bilayer graphene is computed and compared. It is shown that for a given valley and spin, n in a bilayer is doubled with respect to the monolayer. This implies that bilayer graphene will have twice as many edge states as single layer graphene, which we confirm with numerical calculations and analytically in the case of an armchair terminated surface. Bilayer graphene is a weak topological insulator, whose surface spectrum is susceptible to gap opening under spin-mixing perturbations. We also assess the stability of the associated topological bulk state of bilayer graphene under various perturbations. Finally, we consider an intermediate situation in which only one of the two layers has spin orbit coupling, and find that although individual valleys have non-trivial Chern numbers, the spectrum as a whole is not gapped, so that the system is not a topological insulator.

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Rashba Effect in the Graphene/Ni(111) System

Cited by 475 publications

References 28 publications

Raman spectroscopy and imaging of graphene

Raman spectroscopy and imaging of graphene

Topological Anderson insulator phenomena

Band topology and the quantum spin Hall effect in bilayer graphene

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