Rayleigh Waves on Gallium Arsenide

Wet-etched phononic crystal waveguiding on GaAs

“…While these wet-etched holes do provide a platform to demonstrate waveguiding behaviour along the GaAs surface, the larger than desired attenuation is mimicked in the simulations, which have estimated decay constant of approximately 1 dB/a. The leakage of acoustic power into the phononic crystal and bulk may be caused by the Pseudo-SAW behaviour of GaAs along the [110] direction (Webster & Carr, 1985), radiating into the substrate bulk (Wu, et al, 2016), or the coupling of multiple modes present in the bandgap (Pennec, et al, 2010). Further analysis into the origins of the decay mechanism will not be studied here.…”

Applications of surface acoustic and shallow bulk acoustic wave devices

“…Early key papers on SAW devices areto be found in [21]- [23]. Also, other review papers deal with SAW filters [24], components for electronic warfare receivers [25], SAW-device applications [26]- [29], SAW resonators [30]- [32], SAW materials [33], SAW waveguides [34], SAW waves and acoustoelectric interactions [35], [36], SAW reflective array structures [37], acoustooptic Bragg modulators for integrated optic communications [38], SAW-based fixed and adaptive filtering on GaAs [39], hybrid programmable transversal filters [40], and SAW-based acoustic charge transport (ACT) processes and structures on GaAs [41]. Principles of SBAW propagation and devices are contained in [42] and [43].…”

“…Berlinite (a-AIP0 4 ) single crystals have also been under investigation as an alternative to quartz in microwave acoustic applications [64], [65]. While a variety of crystal cuts exists for SAW propagation on gallium arsenide (GaAs) [39], [52], the listing in Table 4 is forthe (100)-cut with (110)-propagation, for maximum K2…”

“…The large TCO of +52 ppm/ °C for CaAs can be reduced to zero using thin-film overlays. For PTF operation with the CaAs device, a tapped FET interaction region allows direct interaction with the SAW [39]. This provides milliwatt power dissipation per tap, with high input dynamic range, low spurious signal levels, and large tap on/off ratios.…”

“…Biasing is used to deplete the mobile charge carriers in the region beneath the lOTs so that they do not short out the electrical fields between excited electrodes. With this modification, matched filtering, programmable filtering, or programmable synchronous correlation can be implemented on GaAs with integrated-circuit compatibility [39], [52]. In a reported programmable SAW filter on n-type GaAs, with a carrier concentration of 1 x 10 16 cm-3 , segmented-FET circu itry was used for tap selection.…”