Reaction and diffusion phenomena in Ag-doped Mg 2 Si

Godlewska, E.; Mars, Krzysztof; Drozdz, Pawel; Tchórz, Adam; Książek, Marzanna

doi:10.1016/j.jallcom.2015.10.174

Cited by 12 publications

(4 citation statements)

References 13 publications

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“…Fig. 4 showed a FESEM image magnified by 5000 times of Mg 2 Si and Mg 2− x Nd x Si thin film samples annealed at 400°C for 4 h. The results showed that the Mg 2 Si grains doped with Nd had a reduced size and were aggregated into clusters, which was similar to the situation of Ag‐doped Mg 2 Si [22].…”

Section: Resultsmentioning

confidence: 96%

Influences of Nd doping on preparing Mg ₂ Si semiconductor thin films by thermal evaporation

Luo

Wang

et al. 2019

Micro & Nano Letters

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In this work, the thermal evaporation method was adopted to prepare Nd-doped Mg 2 Si semiconductor thin films on n-Si(111) substrate. The structure, morphology and optical properties of these Mg 2 Si thin films doped with Nd were studied by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and Raman spectroscopy (RAMAN). The XRD results showed that Nd dopant led to weakened Mg 2 Si diffraction peaks and bigger lattice constants. The scanning electron microscopy results indicated decreased size of Mg 2 Si grains and clusters formed by the grains because of Nd dopant. The RAMAN results showed that the intensity of the characteristic peaks near 256 and 690 cm −1 decreased due to the influence of Nd doping.

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Section: Resultsmentioning

confidence: 96%

Influences of Nd doping on preparing Mg ₂ Si semiconductor thin films by thermal evaporation

Luo

Wang

et al. 2019

Micro & Nano Letters

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“…They determine the physical and chemical properties of the coatings, including the resistance to high-temperature oxidation [95,96] and corrosion in electrolyte solutions [97]. They study the kinetics and mechanism of diffusion [98,99]. Additionally, the research related to the development of materials such as compounds with the perovskite structure [100,101], composite, including carbon-metal oxide systems [102], thermoelectric materials [103], and materials with catalytic properties [101], is performed.…”

Section: Agh University Of Science and Technologymentioning

confidence: 99%

Electrochemistry at Krakowian research institutions

Skibińska

Żabiński

2023

J Solid State Electrochem

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The electrochemistry research team activity from Poland is marked by significant increase in the last 20 years. The joining of European Community in 2004 gives an impulse for the development of Polish science. The development of electrochemistry has been stimulated by cooperation with industry and the establishment of technology transfer centers, technology parks, business incubators, etc. and the mostly by simplified international collaborations. Five research institutions from Krakow reports work in the field of electrochemistry. The achievements of all teams are briefly described.

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“…[4,5] Mg 2 Si has been widely used in many fields due to its attractive properties such as thermoelectric, optoelectronic, electrochemical, and mechanical ones. To improve these properties, especially the thermoelectric property, different elements were doped into Mg 2 Si, such as Ag, [6] B, [7] Bi, [8,9] Cu, [10] Li, [11] P, [12] Sb, [13,14] Y, [15] rare earth elements, [16] and codoped strategy. [17,18] Undoped Mg 2 Si is well known as a nonmagnetic semiconductor.…”

Section: Introductionmentioning

confidence: 99%

Magnetic Properties of 3d Transition Metal Atoms (V, Cr, Mn, Fe, Co, or Ni)‐Doped Mg₂Si

Liao

Long

Xie

et al. 2022

Physica Status Solidi (b)

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The magnetic properties of Mg2Si‐based dilute magnetic semiconductors in Mg62X2Si32 systems (X = V, Cr, Mn, Fe, Co, and Ni) are investigated by spin‐polarized first‐principle calculations. The ground‐state magnetic interaction of V‐, Cr‐, or Fe‐doped Mg2Si system is ferromagnetic (FM) coupling, consistent with the double‐exchange mechanism. The Mn‐ or Co‐doped Mg2Si system is antiferromagnetic (AFM) coupling, which can be explained by the superexchange mechanism. The ground state of Ni‐doped Mg2Si is the nonspin‐polarized state. The V‐ or Cr‐doped Mg2Si exhibits half‐metallic character, Mn‐ or Co‐doped Mg2Si is a semiconductor, and Fe‐doped Mg2Si presents metallic nature. It can be seen that different 3d transition metal atom‐doped Mg2Si correspond to different potential applications.

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Reaction and diffusion phenomena in Ag-doped Mg 2 Si

Cited by 12 publications

References 13 publications

Influences of Nd doping on preparing Mg ₂ Si semiconductor thin films by thermal evaporation

Influences of Nd doping on preparing Mg ₂ Si semiconductor thin films by thermal evaporation

Electrochemistry at Krakowian research institutions

Magnetic Properties of 3d Transition Metal Atoms (V, Cr, Mn, Fe, Co, or Ni)‐Doped Mg₂Si

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Reaction and diffusion phenomena in Ag-doped Mg 2 Si

Cited by 12 publications

References 13 publications

Influences of Nd doping on preparing Mg 2 Si semiconductor thin films by thermal evaporation

Influences of Nd doping on preparing Mg 2 Si semiconductor thin films by thermal evaporation

Electrochemistry at Krakowian research institutions

Magnetic Properties of 3d Transition Metal Atoms (V, Cr, Mn, Fe, Co, or Ni)‐Doped Mg2Si

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Influences of Nd doping on preparing Mg ₂ Si semiconductor thin films by thermal evaporation

Influences of Nd doping on preparing Mg ₂ Si semiconductor thin films by thermal evaporation

Magnetic Properties of 3d Transition Metal Atoms (V, Cr, Mn, Fe, Co, or Ni)‐Doped Mg₂Si