Realization of Large Area Co₂₀Fe₆₀B₂₀-Based Perpendicular Magnetic Tunnel Junction for CMOS Compatible Device Application

Abstract

This study reports the current-induced switching of a Co20Fe60B20/MgO/Co20Fe60B20-based perpendicular magnetic tunnel junction (p-MTJ) with a [Co/Pt]4 stack as a synthetic anti-ferromagnetic (SAF) layer. Electrical and spectroscopic evidence of p-MTJs reveals that the pinning of the Co20Fe60B20 layer by the SAF through a Ta spacer layer enhances the switching resistance after annealing at 650 K (375 °C). A drastic improvement of 6 times in the tunneling magnetoresistance (TMR) was observed after annealing in an external magnetic field (14% for as-deposited and 83% for annealed both for zero bias). The TMR also shows a gradual increased behavior with bias at room temperature, which may be attributed to the multi-domain switching with increase in current. The analogous SAF-based MTJ devices were modeled using the non-equilibrium Green’s function (NEGF) to validate the experimental results. The existence of a stable TMR and the low switching current density of the fabricated p-MTJ structures provides higher reliability and low-power operation. This makes it attractive for next-generation MTJ applications, especially for embedded memory, system-on-chip, IoT, and neuromorphic computing applications.

Probing Ferrimagnetic Semiconductor with Enhanced Negative Magnetoresistance: 2D Chromium Sulfide

“…The grown Cr 2 S 3 over Al 2 O 3 was patterned through standard semiconductor process flow and afterward, ≈40 nm non‐magnetic aluminum (Al) was deposited using high vacuum thermal evaporation (fabrication process: Table S5 and Figure S9, Supporting Information). [ 36 ] The current–voltage ( J – V ) and resistance–temperature (ρ– T ) analysis were investigated for Al/Cr 2 S 3 /Al structures ( Figure a) in the absence of the applied magnetic field ( H ext ). Figure 3b represents the J – V characteristics of Al/Cr 2 S 3 /Al structures, where bilateral ohmic behaviors are observed for device structure in −500 → +500 mV bias at room temperature.…”

Nanophotonic Resonator Assisted Photonic Spin Hall Enhancement for Sensing Application

“…In recent years, much interest has grown in investigating the spin Hall effect (SHE) in electrons, which is a collection of relativistic SOI phenomenon 1 . The ability to generate, manipulate, and detect spin-currents has given rise to applications such as boolean logic, memories, computing, and hardware security [2][3][4] etc. Similarly, the photonic spin hall effect (PSHE) has shown various promising applications and is expected to show superior performance owing to its inherent advantage.…”

Morphology induced large magnetic anisotropy in obliquely grown nanostructured thin film on nanopatterned substrate

“…Interfacial morphology and symmetry breaking effect at the nanoscale strongly influence magnetic response of a material such as magnetic anisotropy [1], coercivity [2], magnetization reversal process [3], hysteresis [4], magneto-resistance [5]. In particular, magnetic anisotropy that relies on the preferred orientation of the spin alignment [6] of a thin film structure have extensively finds its application in the spintronics industry [7], perpendicular spin valves [8], magnetic tunnel junction devices [9] as well as other applications in magnetoelectronics [10], high-density storage media [11], and magnetic sensors [12]. Therefore, tailoring of magnetic anisotropy (MA) by modifying the surface and interface morphology is a fascinating field of research.…”