Realization of Multiple Synapse Plasticity by Coexistence of Volatile and Nonvolatile Characteristics of Interface Type Memristor

Abstract

Studies on neuromorphic computing systems are becoming increasingly important in the big-data-processing era as these systems are capable of energy-efficient parallel data processing and can overcome the present limitations owing to the von Neumann bottleneck. The Pt/WO x /ITO resistive random-access memory device can be used to implement versatile synapse functions because it possesses both volatile and nonvolatile characteristics. The gradual increase and decrease in the current of the Pt/WO x /ITO device with its uniform resistance state for endurance and retention enables additional synaptic applications that can be controlled using electric pulses. If the volatile and nonvolatile device properties are set through rehearsal and forgetting processes, the device can emulate various synaptic behaviors, such as potentiation and depression, paired-pulse facilitation, post-tetanic potentiation, image training, Hebbian learning rules, excitatory postsynaptic current, and Pavlov's test. Furthermore, reservoir computing can be implemented for applications such as pattern generation and recognition. This emphasizes the various applications of future neuromorphic devices, demonstrating the various favorable characteristics of pulse-enhanced Pt/ WO x /ITO devices.