Recent advances in enhancing the photodetector performance of 2D materials by combining them with organic thin films

Guo, Lei; Han, Jiayue; Wang, Jun

doi:10.1039/d3tc04206e

Cited by 13 publications

(1 citation statement)

References 243 publications

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“…1,3,4,33–35 Fabricating organic/2D hybrids as the functional parts of photodetectors may combine their favorable properties and alleviate the shortcomings of any of the single materials. 4,36–38 The G sheets transferred on the octadecyltrichlorosilane-modified SiO 2 /Si substrate have a smoother topography and uniform doping. The large, highly crystallized C 60 film formed on these G sheets plays a key role in fabricating sensitive G/C 60 /pentacene phototransistors.…”

Section: Introductionmentioning

confidence: 99%

Dual-benefit strategy for developing an efficient photodetector with prompt response to UV-near IR radiations: in situ synthesis and crystallization through a simple one-step annealing

Yu,

Wan,

Song

et al. 2024

J. Mater. Chem. A

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Section: Introductionmentioning

confidence: 99%

Dual-benefit strategy for developing an efficient photodetector with prompt response to UV-near IR radiations: in situ synthesis and crystallization through a simple one-step annealing

Yu,

Wan,

Song

et al. 2024

J. Mater. Chem. A

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Drosophila Visual System Inspired Ambipolar OFET for Motion Detection

Xie,

Leng,

Sun

et al. 2024

Adv Funct Materials

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Drosophila can rapidly and precisely detect changes in light in their surroundings and achieve acute perception of motion information with high energy efficiency and adaptivity owing to the cooperation of “ON” channel and the “OFF” channel in its visual system. Optical controlled bidirectional synaptic behavior of neuromorphic device is important for modeling parallel processing channels of Drosophila's visual system. In this study, an ambipolar transistor utilizing a bilayer architecture composed of p‐type pentacene and n‐type C60 as semiconductors is developed, with near‐infrared (NIR) PbS quantum dots serving as the charge‐trapping layer. This design enables a gate‐tunable positive and negative photoresponse, driven by photogating and photovoltaic effects at visible and NIR wavelengths. When regulated by a negative gate voltage, the device exhibits a suppressed photocurrent relaxation time exceeding 1000 s, demonstrating stable long‐term inhibitory characteristics. Consequently, high‐contrast excitatory and inhibitory synapses facilitate orientation and motion detection. Identification accuracies of up to 94.8% for motion direction and 98.1% for dynamic gestures are achieved. Practical applications such as intelligent monitoring and human–computer interaction stand to benefit significantly from these findings.

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Infrared Photodetectors: Recent Advances and Challenges Toward Innovation for Image Sensing Applications

Saleem,

Kyaw,

Hur

2024

Advanced Optical Materials

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High‐resolution infrared (IR) imaging technology holds substantial significance across diverse fields including biomedical imaging, environmental surveillance, and IR digital cameras. Current IR detectors used in commercial applications are based on ultra‐high vacuum‐processed traditional inorganic semiconductors like silicon or III‐V compounds (e.g., Si, Ge, and InGaAs). However, the rapid advancements in applications such as autonomous vehicles, virtual reality, and point‐of‐care healthcare are driving an escalating need for innovative imaging technologies. This review aims to bridge the gap by exploring solution‐processed semiconductor photodetectors (PDs), which offer distinct advantages including cost‐effectiveness, tunable spectral response, and potential for multiple‐exciton generation. These characteristics make them particularly suitable for optical communication, IR imaging, and biological monitoring applications. This review provides comprehensive insights into the research trends pertaining to solution‐processed IR detectors and imagers based on colloidal quantum dots, perovskites, organic compounds, and 2D materials. The review commences with the current market worth of image sensors, the fundamental principles of single‐pixel and multipixel array IR imagers, and key parameters used to assess IR detector performance. In essence, the review concludes with a summary of recent advancements and future prospects for next‐generation IR PD devices and their potential application as an IR imager.

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Recent advances in enhancing the photodetector performance of 2D materials by combining them with organic thin films

Abstract: Two dimension (2D) materials-based photodetectors usually indicate excellent properties such as ultrafast and broadband response, but the atomic thickness of 2D materials usually leads to low absorption coefficient. Pure 2D...

Cited by 13 publications

References 243 publications

Dual-benefit strategy for developing an efficient photodetector with prompt response to UV-near IR radiations: in situ synthesis and crystallization through a simple one-step annealing

Dual-benefit strategy for developing an efficient photodetector with prompt response to UV-near IR radiations: in situ synthesis and crystallization through a simple one-step annealing

Drosophila Visual System Inspired Ambipolar OFET for Motion Detection

Infrared Photodetectors: Recent Advances and Challenges Toward Innovation for Image Sensing Applications

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