Recent Applications and Future Perspectives of Heterojunction Phototransistors Based on Amorphous Oxide Semiconductors

Abstract

Thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) have attracted significant attention in the field of flat-panel displays due to their excellent electrical performance. Heterojunction phototransistors, formed by integrating amorphous oxide semiconductor thin-film transistors (AOSTFTs) with diverse optoelectronic materials, are of significant research interest and possess extensive application potential. Their advantages include a broad responsive spectral range, adjustable photoresponsivity, and high detectivity, making them a promising technology for digital imaging applications, from low-dose X-ray or biofluorescence detection to neuromorphic vision systems. Herein, we summarize the principal working mechanisms, recent research progress, application fields, and development trends of the AOS based heterojunction phototransistors and discuss the challenges that need to be addressed in the near future.