Recent progress of InGaN-based red light emitting diodes

Lu, Zhicheng; Zhang, Kang; Zhuang, Jianbang; Lin, Junjie; Lu, Zhian; Jiang, Zhizhong; Lu, Yijun; Chen, Zhong; Guo, Weijie

doi:10.1016/j.micrna.2023.207669

Cited by 9 publications

(3 citation statements)

References 134 publications

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“…Indium gallium nitride (InGaN), being a direct bandgap III-V semiconductor material, has attracted extensive interest in academic and industrial research due to its high potential for next-generation display technology applications, including ultra-large and very small high-resolution displays, augmented reality (AR) and virtual reality (VR) [1][2][3]. Compared to other materials, InGaN allows the use of the same materials system for blue, green and red LEDs whilst the efficiency of nitride * Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Microscopy studies of InGaN MQWs overgrown on porosified InGaN superlattice pseudo-substrates

Ji,

Frentrup,

Fairclough

et al. 2024

Semicond. Sci. Technol.

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In this study, possible origins of small V-pits observed in multiple quantum wells (MQWs) overgrown on as-grown and porosified InGaN superlattice (SL) pseudo-substrates have been investigated. Various cross-sectional transmission microscopy techniques revealed that some of the small V-pits arise from the intersection of threading defects with the sample surface, either as part of dislocation loops or trench defects. Some small V-pits without threading defects are also observed. Energy dispersive x-ray study indicates that the Indium content in the MQWs increases with the averaged porosity of the underlying template, which may either be attributed to a reduced compositional pulling effect or the low thermal conductivity of the porous layer. Furthermore, the porous structure inhibits the glide or extension of the misfit dislocations (MD) within the InGaN SL. The extra strain induced by the higher Indium content and the hindered movement of the MDs combined may explain the observed additional small V-pits present on the MQWs overgrown on the more relaxed templates.

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Section: Introductionmentioning

confidence: 99%

Microscopy studies of InGaN MQWs overgrown on porosified InGaN superlattice pseudo-substrates

Ji,

Frentrup,

Fairclough

et al. 2024

Semicond. Sci. Technol.

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“…More detailed descriptions of some specific applications of nitride semiconductors can be found in Refs. [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Toward Red Light Emitters Based on InGaN-Containing Short-Period Superlattices with InGaN Buffers

Staszczak,

Gorczyca,

Grzanka

et al. 2023

Materials

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In order to shift the light emission of nitride quantum structures towards the red color, the technological problem of low In incorporation in InGaN−based heterostructures has to be solved. To overcome this problem, we consider superlattices grown on InGaN buffers with different In content. Based on the comparison of the calculated ab initio superlattice band gaps with the photoluminescence emission energies obtained from the measurements on the specially designed samples grown by metal-organic vapor phase epitaxy, it is shown that by changing the superlattice parameters and the composition of the buffer structures, the light emission can be shifted to lower energies by about 167 nm (0.72 eV) in comparison to the case of a similar type of superlattices grown on GaN substrate. The importance of using superlattices to achieve red emission and the critical role of the InGaN buffer are demonstrated.

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“…Recent investigations have spotlighted third-generation solar cells like InGaN solar cells, driven by their potential for high conversion efficiency [36][37][38][39][40]. The InGaN alloy boasts versatile applications in photodetectors, electronic devices [41], and laser diodes [42]. A distinguishing feature of InGaN lies in its adjustable direct wide bandgap, spanning from 0.7 eV (InN) to 3.42 eV (GaN) [43].…”

mentioning

confidence: 99%

Leveraging InGaN solar cells for visible light communication reception

Manzoor,

Jamshed

et al. 2024

IET Networks

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Solar cells are increasingly being utilised for both energy harvesting and reception in free‐space optical (FSO) communication networks. The authors focus on the implementation of a mid‐band p‐In0.01Ga0.99 N/p‐In0.5Ga0.5 N/n‐In0.5Ga0.5 N (PPN) solar cell, boasting an impressive 26.36% conversion efficiency (under 1.5AM conditions) as a receiver within an indoor FSO communication network. Employing a solar cell with dimensions of 1 mm in length and width, the FSO system underwent simulation using Optisystm software, while the solar cell's behaviour was simulated using SCAPS‐1D. The received power from the solar cell was then compared to that of four commercially available avalanche photodiode (APD) receivers. Exploring incident wavelengths spanning 400–700 nm within the visible spectrum, across transmission distances of 5, 10, 15, and 20 m, the study presented current‐voltage (IV) and power‐voltage curves. Notably, the InGaN solar cell exhibited superior electrical power output compared to all commercial APDs. In conclusion, the findings underscore that augmenting received power has the potential to enhance FSO network quality and support extended transmission distances.

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Recent progress of InGaN-based red light emitting diodes

Cited by 9 publications

References 134 publications

Microscopy studies of InGaN MQWs overgrown on porosified InGaN superlattice pseudo-substrates

Microscopy studies of InGaN MQWs overgrown on porosified InGaN superlattice pseudo-substrates

Toward Red Light Emitters Based on InGaN-Containing Short-Period Superlattices with InGaN Buffers

Leveraging InGaN solar cells for visible light communication reception

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