Recent progress of the native defects and p-type doping of zinc oxide

Tang, Kun; Gu, Shulin; Ye, Jiandong; Zhu, Shunming; Zhang, Rong; Zheng, Yi

doi:10.1088/1674-1056/26/4/047702

Cited by 56 publications

(30 citation statements)

References 163 publications

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“…Furthermore, although Ag-N pairs are expected to have deeper states than the isolated elements, Ag-N-H triangles may yield lower energy levels at 0.14 eV [215], showing that intrinsic impurities may have yet another way of influencing the conductivity of the films. Recent reports suggest that a new route towards obtaining shallower acceptor energies in ZnO is to use the traditional acceptors in ZnO alloyed by iso-valent elements such as Mg, Be, S, Se, or Te due to their possibility to push up the conduction band minimum or valence band maximum energies as well as the suppression of compensating intrinsic defects [216]. However, although there is much research effort along the new pathways, still no breakthrough is visible.…”

Section: P-type Doping Issue In Znomentioning

confidence: 99%

ZnO as a Functional Material, a Review

2019

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Zinc oxide (ZnO) is a fascinating wide band gap semiconductor material with many properties that make it widely studied in the material science, physics, chemistry, biochemistry, and solid-state electronics communities. Its transparency, possibility of bandgap engineering, the possibility to dope it into high electron concentrations, or with many transition or rare earth metals, as well as the many structures it can form, all explain the intensive interest and broad applications. This review aims to showcase ZnO as a very versatile material lending itself both to bottom-up and top-down fabrication, with a focus on the many devices it enables, based on epitaxial structures, thin films, thick films, and nanostructures, but also with a significant number of unresolved issues, such as the challenge of efficient p-type doping. The aim of this article is to provide a wide-ranging cross-section of the current state of ZnO structures and technologies, with the main development directions underlined, serving as an introduction, a reference, and an inspiration for future research.

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Section: P-type Doping Issue In Znomentioning

confidence: 99%

ZnO as a Functional Material, a Review

2019

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“…Nevertheless, many wide‐bandgap semiconductors suffer from”asymmetric doping” limitation. For example, n‐type dopants with shallow energy levels in diamond and stable p‐type doping in ZnO are notoriously difficult . For 2D semiconductors, p‐n junctions at the MOSFET level has not been achieved yet.…”

Section: Introductionmentioning

confidence: 99%

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Liao

Sang

Shimaoka

et al. 2019

Adv Elect Materials

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tical applications due to the high input impedance, breakdown voltage, and integration ability. Tremendous efforts have been made to achieve low subthreshold swing (SS) MOSFETs on low-dimensional materials to overcome the thermal limit of 60 mV dec −1 in conventional CMOS technology. [8][9][10] On the other hand, growing attention has also been paid to the extreme semiconductors MOSFETs based on 2DHG and 2DEG for the applications in high-power, high-frequency, and high temperature electronics. [11][12][13] However, state-of-the-art conventional MOSFETs based on low-dimensional channels such as 2DHG or 2DEG always exhibit normally on (depletion mode) behavior and show uncertainty in threshold voltage. [8][9][10][11][12][13][14][15][16] Energy-efficient normally off (enhancement mode) FETs with low SS values and tunable threshold voltage are strongly in demand from the viewpoint of energy-saving, safety aspects, gate reliability, and electronic circuit simplicity. [17] Junction FET by using p-n junction or Schottky metal gate can achieve normally off operation. [18,19] Nevertheless, many wide-bandgap semiconductors suffer from"asymmetric doping" limitation. For example, n-type dopants with shallow energy levels in diamond and stable p-type doping in ZnO are notoriously difficult. [20,21] For 2D semiconductors, p-n junctions at the MOSFET level has not been achieved yet. These bottlenecks makes inversion-type enhancement-mode MOSFETs difficult, although initial results were reported. [22] While for metal-semiconductor FETs (MES-FETs), there is an intrinsic problem of forward bias limitation. Normally off MOSFETs were reported through channel structure modification, [23] defective gate oxides, [24,25] surface treatments, [26][27][28][29] and ion implantation. [30] However, in most of the cases, the principle is based on the generation of defects, which degrade the device performance as well as the controllability. The formation of recess structure at the gate can successfully lead to normally off operation for 2DEG at the AlGaN/GaN interface, [31] but not applicable to H-terminated diamond and low-dimensional semiconductors.In this work, we propose and demonstrate the device concept of metal-insulator-metal-semiconductor FET (MIMS-FET) based on a 2DHG channel to overcome the drawbacks of MOSFET and MESFET. We show that the MIMS-FET exhibits normally off operation, low subthreshold swing ≈76 mV dec −1 , high drain current, high on/off current ratio over 10 9 , and low gate leakage. These electrical properties are thermally stable up 2D electron and hole gases (2DEG or 2DHG) based on semiconductor surface/interface or 2D materials are promising for next-generation integrated circuits and high-frequency and -power electronics. To reduce power consumption, normally off operation and low-switching-loss metal-oxide fieldeffect transistors (MOSFETs) based on 2DEG or 2DHG are highly in demand. The present methods to achieve normally off MOSFETs have various shortcomings such as reduction in carrier mobility, sacrifice of dra...

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“…ZnO has a wide bandgap of 3.37 eV at room temperature and a higher exciton binding energy (60 meV), which has attracted much attention for several decades because of its potential applications in UV detectors, lasers, transparent electronics, piezo-phototronics, solar cells and so on 1,2 . There are various native defects in ZnO such as oxygen vacancy ( V O ), zinc vacancy ( V Zn ), oxygen interstitial ( O i ), Zn interstitial ( Zn i ), Zn at V O ( Zn O ), O at V Zn ( O Zn ) and their pairs or complexes 3–6 . The as-grown ZnO usually exhibits n-type which is traditionally attributed to the native defects such as Zn i , V O , Zn O and H related shallow defects 3,7,8 .…”

Section: Introductionmentioning

confidence: 99%

Evolution of native defects in ZnO nanorods irradiated with hydrogen ion

Wang

Zheng

et al. 2019

Sci Rep

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This work reports the study on the evolution of native defects in ZnO nanorods irradiated with hydrogen ion. ZnO nanorod arrays grown vertically on silicon substrates were irradiated by 180 keV H+ ions to a total fluence of 8.50 × 1015 ions/cm2. The X-ray diffraction spectra, photoluminescence spectra before and after irradiation and the real-time ionoluminescence spectra of the nanorod arrays during the irradiating process were measured. Formation and evolution of defects during H+ ion irradiation and effects of irradiation on the crystal structure and optical property were studied. Blue shift of exciton emission, shrink of lattice c and improvement of the crystallinity of ZnO nanorods after irradiation were observed. Simple surface passivation of the nanorods could improve the radiation resistance. Formation and evolution of the defects during H+ ion irradiation could be clarified into four stages and the related models are provided.

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Recent progress of the native defects and p-type doping of zinc oxide

Cited by 56 publications

References 163 publications

ZnO as a Functional Material, a Review

ZnO as a Functional Material, a Review

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Evolution of native defects in ZnO nanorods irradiated with hydrogen ion

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