Recent Progress on Irradiation-Induced Defect Engineering of Two-Dimensional 2H-MoS2 Few Layers

Zhao, Guoru; Deng, Hua; Tyree, Nathaniel; Guy, Michael; Lisfi, A.; Peng, Qing; Yan, Jia-An; Wang, Chundong; Lan, Yucheng

doi:10.3390/app9040678

Cited by 60 publications

(43 citation statements)

References 229 publications

(422 reference statements)

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“…Furthermore, they have emerged as a fascinating class of materials for catalysis . While irradiation of these materials with energetic (MeV) beams has been shown to modify their properties due to the creation of defects, here we demonstrated that irradiating bulk TMD flakes with a low energy proton flux leads to the formation and accumulation of hydrogen and enables the control of the electronic properties of ML TMDs at the nano‐ and micro scale through the creation of light‐emitting, highly strained domes. The irradiation process proposed here therefore allows the morphological and optical properties of the flakes to be altered without the creation of defects (as demonstrated by the stability of the domes, see Figure S11 in the Supporting Information, and by optical measurements, see Figure S15 in the Supporting Information), resulting into relatively large areas characterized by efficient light emission, due to the creation of the domes.…”

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confidence: 70%

“…The samples, consisting of thick (tens to hundreds of MLs) TMD flakes, were obtained by mechanical exfoliation, deposited on Si substrates, and afterwards proton‐irradiated using a Kaufman source (see the Experimental Methods). Differently from the other works in the literature concerning proton‐irradiation of TMDs—where beams with energies ≥10 5 eV are used, aiming at the controlled formation of defects in the irradiated samples—here we irradiate the flakes with low energy beams (≲20 eV), with the specific goal of suppressing the defect formation process. The top‐right inset of Figure a displays the optical microscopy image of a large bulk WS 2 sample after irradiation with an impinging dose d H = 8 × 10 16 protons cm −2 .…”

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Controlled Micro/Nanodome Formation in Proton‐Irradiated Bulk Transition‐Metal Dichalcogenides

et al. 2019

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The notable transformation of the electronic properties of transition-metal dichalcogenides (TMDs) when reduced to a single X-M-X plane (X: chalcogen; M: metal) [1] makes them suitable for flexible, innovative optoelectronic devices, [2][3][4] and transistors. [5] Like graphene, few-layer TMDs can also withstand surprisingly large mechanical deformations, [6][7][8][9] which, coupled to the material's electronic structure, would enable the observation of nondissipative topological transport, provided a periodic modulation of strain is attained. [10][11][12][13] TMD monolayers (MLs) and nanostructures are also important for their catalytic role in the cost-effective production of hydrogen. [14][15][16] These examples share the need to achieve spatial control of the material's properties, over sample regions with size ranging from the nano [14,16] to the micrometer [16] scale lengths.In this study, we present a route toward the patterning of TMDs based on the effects of low-energy proton irradiation [17] on the structural and electronic properties of bulk WS 2 , WSe 2 , WTe 2 , MoS 2 , MoSe 2 , and MoTe 2 . Suitable irradiation conditions trigger the production and accumulation of H 2 just beneath the first X-M-X basal plane, leading to the localized exfoliation of the topmost monolayer and to the formation of spherically shaped domes. Structural and optical characterizations confirm that these domes are typically one ML-thick and contain H 2 at pressures in the 10-100 atm range, depending on their size. Such high pressures induce strong and complex strain fields acting on the curved X-M-X planes, that are evaluated by means of a mechanical model. The domes' morphological characteristics can be tuned by lithographically controlling the area of the sample basal plane participating in the hydrogen production process. This results in the unprecedented fabrication of robust domes with controlled position/density and sizes tunable from the nanometer to the micrometer scale, that, by virtue of their inherently strained nature and geometry, might prompt a variety of applications.The samples, consisting of thick (tens to hundreds of MLs) TMD flakes, were obtained by mechanical exfoliation, deposited on Si substrates, and afterwards proton-irradiated using a Kaufman source (see the Experimental Methods). Differently from the other works in the literature concerning protonirradiation of TMDs-where beams with energies ≥10 5 eV are used, [18] aiming at the controlled formation of defects in the irradiated samples-here we irradiate the flakes with low energy At the few-atom-thick limit, transition-metal dichalcogenides (TMDs) exhibit strongly interconnected structural and optoelectronic properties. The possibility to tailor the latter by controlling the former is expected to have a great impact on applied and fundamental research. As shown here, proton irradiation deeply affects the surface morphology of bulk TMD crystals. Protons penetrate the top layer, resulting in the production and progressive accumulation of molecular hydr...

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Controlled Micro/Nanodome Formation in Proton‐Irradiated Bulk Transition‐Metal Dichalcogenides

et al. 2019

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“…The effect of ion and electron irradiation on the structural, 14 − 17 electronic 18 − 22 and optical 23 − 26 properties of 2D MoS 2 has been extensively researched. 27 Only a few studies have evaluated the effect of gamma irradiation on the physical properties of 2D group VI TMDCs. Using a 60 Co source, Felix et al irradiated 1 L WS 2 crystals with an absorbed dose of 400 Gy and observed ferromagnetic hysteresis, which they attributed to a defect configuration involving one W and two S vacancies.…”

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confidence: 99%

Gamma Radiation-Induced Oxidation, Doping, and Etching of Two-Dimensional MoS₂ Crystals

et al. 2021

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Two-dimensional (2D) MoS 2 is a promising material for future electronic and optoelectronic applications. 2D MoS 2 devices have been shown to perform reliably under irradiation conditions relevant for a low Earth orbit. However, a systematic investigation of the stability of 2D MoS 2 crystals under high-dose gamma irradiation is still missing. In this work, absorbed doses of up to 1000 kGy are administered to 2D MoS 2 . Radiation damage is monitored via optical microscopy and Raman, photoluminescence, and X-ray photoelectron spectroscopy techniques. After irradiation with 500 kGy dose, p-doping of the monolayer MoS 2 is observed and attributed to the adsorption of O 2 onto created vacancies. Extensive oxidation of the MoS 2 crystal is attributed to reactions involving the products of adsorbate radiolysis. Edge-selective radiolytic etching of the uppermost layer in 2D MoS 2 is attributed to the high reactivity of active edge sites. After irradiation with 1000 kGy, the monolayer MoS 2 crystals appear to be completely etched. This holistic study reveals the previously unreported effects of high-dose gamma irradiation on the physical and chemical properties of 2D MoS 2 . Consequently, it demonstrates that radiation shielding, adsorbate concentrations, and required device lifetimes must be carefully considered, if devices incorporating 2D MoS 2 are intended for use in high-dose radiation environments.

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“…Figure 7 d,e showed the peak shifting of O 1s and Zr 3d core level towards higher binding energy, strong spin–orbit doublet of Zr 3d 5/2 -Zr 3d 3/2 obtained with splitting (δ 3d ) 2.37 eV and 2.32 eV for virgin and irradiated samples respectively as tabulated in Table 3 . The minor peak shifting (0.2 eV) of Zr 3d peak and significant peak shifting (1.4 eV) of O 1s spectra is observed as virgin sample is compared to the higher irradiated sample that might be due to the induced defects due to high energy irradiation 66 . The intensity of XPS peaks increased for the irradiated sample relative to the virgin sample.…”

Section: Resultsmentioning

confidence: 92%

Phase transformation and enhanced blue photoluminescence of zirconium oxide poly-crystalline thin film induced by Ni ion beam irradiation

Chauhan

Gupta

Koratkar

et al. 2021

Sci Rep

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Swift heavy ions (SHI) irradiation of Nickel (Ni) beam with different ions fluence bring the modifications in the functional properties of radio frequency (RF) grown zirconium oxide (ZrO2) nanocrystalline thin films. X-ray diffraction analysis affirms the monoclinic to tetragonal phase transformation and diminishing of peak at higher fluence 1 × 1014 and 2 × 1014 ions/cm2 induced by electronic excitation caused by SHI. Zirconium oxide thin films exhibit the same thickness (195 nm) of virgin and irradiated samples and whereas the nanocrystalline thin films have the elemental composition in proper stoichiometry (1:2) as analyzed by rutherford backscattering spectroscopy (RBS). Photoluminescence measurements confirm the blue emission of virgin and irradiated sample recorded at excitation wavelength 270 to 310 nm. The intensity of obtained emission bands varies with fluence which is interpreted in terms of generation and annihilation of defect centers. The characteristic Ag and Bg Raman modes of monoclinic and tetragonal ZrO2 are obtained at different positions. Moreover, the nanocrystalline ZrO2 thin films exhibits the most prominent absorption phenomenon in the visible range and the irradiation cause significant decrease in band gap to 3.69 eV compare to the virgin ZrO2 sample (3.86 eV). XPS analysis indicates the shifting of the core levels Zr 3d and O 1s towards higher binding energy and spin—orbit splitting of different states. The findings in this research justify that the irradiated thin films can be a potential candidate for designing of new materials, intense radiation environments, nuclear reactors, nuclear waste systems, clean energy sources.

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Recent Progress on Irradiation-Induced Defect Engineering of Two-Dimensional 2H-MoS2 Few Layers

Cited by 60 publications

References 229 publications

Controlled Micro/Nanodome Formation in Proton‐Irradiated Bulk Transition‐Metal Dichalcogenides

Controlled Micro/Nanodome Formation in Proton‐Irradiated Bulk Transition‐Metal Dichalcogenides

Gamma Radiation-Induced Oxidation, Doping, and Etching of Two-Dimensional MoS₂ Crystals

Phase transformation and enhanced blue photoluminescence of zirconium oxide poly-crystalline thin film induced by Ni ion beam irradiation

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Recent Progress on Irradiation-Induced Defect Engineering of Two-Dimensional 2H-MoS2 Few Layers

Cited by 60 publications

References 229 publications

Controlled Micro/Nanodome Formation in Proton‐Irradiated Bulk Transition‐Metal Dichalcogenides

Controlled Micro/Nanodome Formation in Proton‐Irradiated Bulk Transition‐Metal Dichalcogenides

Gamma Radiation-Induced Oxidation, Doping, and Etching of Two-Dimensional MoS2 Crystals

Phase transformation and enhanced blue photoluminescence of zirconium oxide poly-crystalline thin film induced by Ni ion beam irradiation

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Gamma Radiation-Induced Oxidation, Doping, and Etching of Two-Dimensional MoS₂ Crystals