Recent progress on kinetic control of chemical vapor deposition growth of high-quality wafer-scale transition metal dichalcogenides

Wang, Qun; Shi, Run; Zhao, Yongsheng; Huang, Runqing; Wang, Zixu; Amini, Abbas; Cheng, Chun

doi:10.1039/d1na00171j

Cited by 28 publications

(23 citation statements)

References 68 publications

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“…In many cases, the available fabrication methods are unable to match the requirements of potential applications. The initial studies on TMDCs and even many investigations today rely on ultrathin flakes mechanically exfoliated from bulk crystals, a method that is inherently unscalable. ,, To bring TMDCs closer to applications, high-temperature chemical vapor deposition (CVD) processes producing high-quality material from oxide powder precursors have been developed. ,− Many of these processes struggle with uniformity on large areas and thickness control, although some deposition chemistry and engineering solutions to these issues have been presented. − What remains largely unsolved, however, is the high temperature required by the CVD processes, typically 600–800 °C for MoS 2 .…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry

et al. 2022

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Two-dimensional transition metal dichalcogenides, such as MoS 2 , are intensely studied for applications in electronics. However, the difficulty of depositing large-area films of sufficient quality under application-relevant conditions remains a major challenge. Herein, we demonstrate deposition of polycrystalline, wafer-scale MoS 2 , TiS 2 , and WS 2 films of controlled thickness at record-low temperatures down to 100 °C using plasma-enhanced atomic layer deposition. We show that preventing excess sulfur incorporation from H 2 S-based plasma is the key to deposition of crystalline films, which can be achieved by adding H 2 to the plasma feed gas. Film composition, crystallinity, growth, morphology, and electrical properties of MoS x films prepared within a broad range of deposition conditions have been systematically characterized. Film characteristics are correlated with results of field-effect transistors based on MoS 2 films deposited at 100 °C. The capability to deposit MoS 2 on poly(ethylene terephthalate) substrates showcases the potential of our process for flexible devices. Furthermore, the composition control achieved by tailoring plasma chemistry is relevant for all low-temperature plasma-enhanced deposition processes of metal chalcogenides.

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Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry

et al. 2022

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“…The CVD growth of single‐crystal h‐BN monolayer has been realized recently with a maximum film area of 100 square centimeters. [ 196,197 ] Nevertheless, the as‐grown wafer‐scale TMD films still suffer from nonuniformity and limited grain sizes, [ 198 ] due to existing difficulties in the precise kinetic control and reproduction of growth parameters. Therefore, efforts are required in the development of growth techniques that further improve film quality and enable large‐scale synthesis of other emerging materials in the expanding 2D family.…”

Section: Discussionmentioning

confidence: 99%

Circuit‐Level Memory Technologies and Applications based on 2D Materials

Liu

Yang

et al. 2022

Advanced Materials

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random-access memory (DRAMs), static random-access memory (SRAMs), [1] and flash memory, [2] multiple transistors and capacitors are employed to constitute a single functional cell. These functional cells are typically integrated to form a memory array for advanced functionality, miniaturized footprints, low power consumption, and reduced latency. Traditional silicon-based complementary metal-oxidesemiconductor (CMOS) technology has been widely used to build these memory arrays. However, the performance improvement of CMOS-based memory relies on the advance of nanofabrication technology to scale down the feature size of transistors, which is approaching the physical limit. [3] To overcome this bottleneck, emerging memory technologies are brought up as promising supplements to conventional memory devices. [4] These novel types of memory include resistive random-access memory (RRAM), [5,6] ferroelectric RAM (FeRAM), [7] optoelectronic RRAM (ORRAM), [8,9] phase-change memory (PCM), [10] and spin-transfer torque magnetoresistive RAM (STT-MRAM). [11,12] Furthermore, emerging memory devices allow non-von-Neumann architectures that pave the way toward high-performance in-memory computing technology. [13,14] For example, memristive crossbar arrays composed of 1-transistor-1-resistor (1T1R) unit cells can enable in-memory computing and are the most cost-efficient thanks to their two-terminal structure. [15] Advanced 3D monolithic stacking integration also emerges as a promising approach to Memory technologies and applications implemented fully or partially using emerging 2D materials have attracted increasing interest in the research community in recent years. Their unique characteristics provide new possibilities for highly integrated circuits with superior performances and low power consumption, as well as special functionalities. Here, an overview of progress in 2D-material-based memory technologies and applications on the circuit level is presented. In the material growth and fabrication aspects, the advantages and disadvantages of various methods for producing large-scale 2D memory devices are discussed. Reports on 2D-material-based integrated memory circuits, from conventional dynamic random-access memory, static random-access memory, and flash memory arrays, to emerging memristive crossbar structures, all the way to 3D monolithic stacking architecture, are systematically reviewed. Comparisons between experimental implementations and theoretical estimations for different integration architectures are given in terms of the critical parameters in 2D memory devices. Attempts to use 2D memory arrays for in-memory computing applications, mostly on logic-in-memory and neuromorphic computing, are summarized here. Finally, challenges that impede the large-scale applications of 2D-material-based memory are reviewed, and perspectives on possible approaches toward a more reliable system-level fabrication are also given, hopefully shedding some light on future research.

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“…The partial pressures of the vaporized solid precursors can be controlled by different approaches, such as gas flow rate adjustment, zone temperature modification, precursor concentration modulation, etc., and different kinetic regimes exist, leading to the production of the desired TMD monolayers. For instance, the stable TMD crystal growth under thermodynamic and kinetic control can be balanced by an increasing gas flow rate, thus modifying the partial pressure of the transition metal source along the gas flow, and the result shows a strong dependence of TMDs’ crystal growth rate on the precursors’ partial pressure . A study investigated the effect of precursor partial pressure on the MoS 2 growth rate and crystal domain shape and found that increasing the MoO 3 mass transfer under a high gas flow rate has an impact on the faster crystal growth rate and showed the influence on the kinetic growth dynamics of edges .…”

Section: Controllable Cvd Growth Of Tmdsmentioning

confidence: 99%

Strategies for Controlled Growth of Transition Metal Dichalcogenides by Chemical Vapor Deposition for Integrated Electronics

et al. 2022

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In recent years, transition metal dichalcogenide (TMD)-based electronics have experienced a prosperous stage of development, and some considerable applications include field-effect transistors, photodetectors, and light-emitting diodes. Chemical vapor deposition (CVD), a typical bottom-up approach for preparing 2D materials, is widely used to synthesize large-area 2D TMD films and is a promising method for mass production to implement them for practical applications. In this review, we investigate recent progress in controlled CVD growth of 2D TMDs, aiming for controlled nucleation and orientation, using various CVD strategies such as choice of precursors or substrates, process optimization, and system engineering. We then survey different patterning methods, such as surface patterning, metal precursor patterning, and postgrowth sulfurization/selenization/tellurization, to mass produce heterostructures for device applications. With these strategies, various well-designed architectures, such as wafer-scale single crystals, vertical and lateral heterostructures, patterned structures, and arrays, are achieved. In addition, we further discuss various electronics made from CVD-grown TMDs to demonstrate the diverse application scenarios. Finally, perspectives regarding the current challenges of controlled CVD growth of 2D TMDs are also suggested.

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Recent progress on kinetic control of chemical vapor deposition growth of high-quality wafer-scale transition metal dichalcogenides

Abstract: 2D transition metal dichalcogenides (TMDs) have attracted significant attention due to their unique physical properties. Chemical vapor deposition (CVD) is generally a promising method to prepare ideal TMDs films with...

Cited by 28 publications

References 68 publications

Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry

Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry

Circuit‐Level Memory Technologies and Applications based on 2D Materials

Strategies for Controlled Growth of Transition Metal Dichalcogenides by Chemical Vapor Deposition for Integrated Electronics

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