Recess integration of micro-cleaved laser diode platelets with dielectric waveguides on silicon

Fonstad, Clifton G.; Rumpler, J.; Barkley, E.; Perkins, James M.; Famenini, Shaya

doi:10.1117/12.773594

Cited by 5 publications

(4 citation statements)

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“…We feel that a solution does in fact exist in the RM 3 surface emitting laser diodes (VCSELs) within silicon CMOS integrated circuit (IC) chips [2], and in this letter we report the extension of RM 3 integration to in-plane edge-emitting laser diodes coupled to in-plane dielectric waveguides. The feasibility of doing this was shown earlier using unbonded passive dummy rib waveguide platelets set in recesses [3]; we now report integration and characterization of platelet laser diodes.…”

Section: W E Report the First Demonstrations Of In-planementioning

confidence: 98%

Integration of Edge-Emitting Laser Diodes With Dielectric Waveguides on Silicon

Famenini¹,

Fonstad²

2012

IEEE Photon. Technol. Lett.

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Edge-emitting 1.55-µm platelet InGaAs/InP laser diodes are bonded in 6.5-µm-deep recesses etched into a thick SiO 2 layer on an Si substrate so that they are aligned and coaxially coupled to SiON dielectric waveguides fabricated within the SiO 2 layer. The integrated lasers show room temperature pulsed and continuous wave (CW) lasing at threshold currents of 17 and 19 mA, respectively. The CW output power measured from the end of the dielectric waveguide at the edge of the chip is more than 1 mW, and laser-to-waveguide coupling losses under 2 dB are observed. CW spectral measurements show single-mode emission in the vicinity of 150 µm. The integrated structure is highly planar with a footprint of only 150 µm × 300 µm, and the integration process is modular and can be used to integrate a variety of devices on the same substrate. Index Terms-Complementary metal-oxide-semiconductor (CMOS) compatible photonics, infrared laser diodes, integrated optoelectronics, photonic integrated circuits (PIC), photonics integration.

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Section: W E Report the First Demonstrations Of In-planementioning

confidence: 98%

Integration of Edge-Emitting Laser Diodes With Dielectric Waveguides on Silicon

Famenini¹,

Fonstad²

2012

IEEE Photon. Technol. Lett.

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“…After bonding, as in classical FCB, the InP substrate is removed, and laser diodes can be fabricated in the III-V epitaxial layers, using wafer-scale processing, and lithograph-ically aligned to the Silicon waveguides underneath. It is also possible to remove the substrate before bonding [46,47]. The drawback of the approach compared with a more conventional FCB process is the lack of an electrical and thermal interface [48].…”

Section: Bondingmentioning

confidence: 99%

Modulators in Silicon Photonics—Heterogenous Integration & and Beyond

2022

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The article below presents a review of current research on silicon photonics. Herein, an overview of current silicon modulator types and modern integration approaches is presented including direct bonding methods and micro-transfer printing. An analysis of current state of the art silicon modulators is also given. Finally, new prospects for III–V-silicon integration are explored and the prospects of an integrated modulator compatible with current CMOS processing is investigated.

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“…The technology described is highly modular so that it can be applied to wide varieties of devices, materials, and substrates; it is also well suited for integrating different wavelength lasers on the same substrate. More details of the integration technology can be found in [17] and [21].…”

Section: Introductionmentioning

confidence: 99%