RECOMBINATION IN HgGaInS 4 SINGLE CRYSTALS

Anedda, Alberto; Casu, Maria Benedetta; Serpi, Alessandro; Burlakov, I.I.; Tiginyanu, I. M.; Ursaki, V. V.

doi:10.1016/s0022-3697(96)00124-2

Cited by 29 publications

(9 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The spectra decreased in intensity and shifted towards higher temperatures with increasing the light excitation temperature. This shift supports the validity of a quasi-continuous trap distribution [27][28][29][30]. Each TSC spectra obtained at different excitation temperatures can be described by the following expression [27]:…”

Section: Initial Rise Methodssupporting

confidence: 71%

Deep Traps Distribution in TlInS₂Layered Crystals

2009

View full text Add to dashboard Cite

The trap centers and distributions in TlInS 2 were studied in the temperature range of 100-300 K by using thermally stimulated currents technique. Experimental evidence was found for the presence of three trapping centers with activation energies 400, 570, and 650 meV. Their capture cross-sections were determined as 6.3 × 10 −16 , 2.7 × 10 −12 , and 1.8 × 10 −11 cm 2 , respectively. It was concluded that in these centers retrapping is negligible as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. An exponential distribution of hole traps was revealed from the analysis of the thermally stimulated current data obtained at different light excitation temperatures. This experimental technique provided a value of 800 meV/decade for the trap distribution.

show abstract

Section: Initial Rise Methodssupporting

confidence: 71%

Deep Traps Distribution in TlInS₂Layered Crystals

2009

View full text Add to dashboard Cite

show abstract

“…17,19,20 A detailed inspection of the spectra shows that the band maximum slightly shifts towards higher energies (DE p ¼ 36 meV) with increasing excitation intensities from 0.1 to 55.7 mW cm À2 (i.e., 13 meV per decade of exciting intensity). The magnitude of the observed blue shift is typical for ternary and quaternary chalcogenide compounds such as TlInS 2 , 14 Tl 2 InGaS 4 , 21 HgInGaS 4 , 22 CuIn 1Àx Ga x Se 2 , 23 respective values of which were 20, 17, 20, 15 meV, respectively.…”

Section: Resultsmentioning

confidence: 77%

Excitation intensity- and temperature-dependent photoluminescence in layered structured Tl2GaInSe2S2 crystals

Gasanly

2013

Journal of Applied Physics

View full text Add to dashboard Cite

Photoluminescence spectra of Tl 2 GaInSe 2 S 2 layered crystals have been registered in the temperature range of 17-62 K and in the wavelength region of 525-690 nm. A broad visible photoluminescence band centered at 590 nm (2.10 eV) was observed at T ¼ 17 K. Variation of emission band has been studied as a function of laser excitation intensity in the 0.1-55.7 mW cm À2 range. The analysis of the spectra reveals that the peak energy position changes with excitation intensity (blue shift). The radiative transitions from moderately deep donor level to shallow acceptor level were suggested to be responsible for the observed band. From X-ray powder diffraction study, the parameters of monoclinic unit cell of Tl 2 GaInSe 2 S 2 were determined. V C 2013 American Institute of Physics. [http://dx.

show abstract

“…Moreover, the shift of the T m values of each glow curve towards higher temperature can be attributed to the charge carrier occupying the deeper level. Such a behavior was explained with the assumption of a quasi‐continuous traps distribution by many authors . Inset 1 of Fig.…”

Section: Resultsmentioning

confidence: 80%

Characteristics of traps in Tl₂Ga₂Se₃S single crystals by low‐temperature thermoluminescence measurements

Delice

Gasanly

2014

Crystal Research and Technology

View full text Add to dashboard Cite

Defect characterization of Tl2Ga2Se3S single crystals has been performed by thermoluminescence (TL) measurements at low temperatures between 10 and 70 K with various heating rate ranging from 0.6 to 1.0 K/s. The TL signal due to the luminescence from trap centers revealed one glow peak having maximum temperature of 36 K. Curve fitting and various heating rate methods were used for the analysis of the glow curve. The activation energy of 13 meV was found by the application of curve fitting method. This practical method also established that the trap center exhibits the characteristics of mixed (general) kinetic order. In addition, various heating rate analysis gave a compatible result (13 meV) with curve fitting as the temperature lag effect was taken into consideration. Distribution of traps was also investigated using an experimental method. A quasi‐continuous distribution was attributed to the determined trap centers.

show abstract

RECOMBINATION IN HgGaInS 4 SINGLE CRYSTALS

Cited by 29 publications

References 10 publications

Deep Traps Distribution in TlInS₂Layered Crystals

Deep Traps Distribution in TlInS₂Layered Crystals

Excitation intensity- and temperature-dependent photoluminescence in layered structured Tl2GaInSe2S2 crystals

Characteristics of traps in Tl₂Ga₂Se₃S single crystals by low‐temperature thermoluminescence measurements

Contact Info

Product

Resources

About

RECOMBINATION IN HgGaInS 4 SINGLE CRYSTALS

Cited by 29 publications

References 10 publications

Deep Traps Distribution in TlInS2Layered Crystals

Deep Traps Distribution in TlInS2Layered Crystals

Excitation intensity- and temperature-dependent photoluminescence in layered structured Tl2GaInSe2S2 crystals

Characteristics of traps in Tl2Ga2Se3S single crystals by low‐temperature thermoluminescence measurements

Contact Info

Product

Resources

About

Deep Traps Distribution in TlInS₂Layered Crystals

Deep Traps Distribution in TlInS₂Layered Crystals

Characteristics of traps in Tl₂Ga₂Se₃S single crystals by low‐temperature thermoluminescence measurements