Reconfigurable dual-band power amplifier based on memristor

Zhang, Zhiwei; Cheng, Zhiqun; Ke, Huajie; Liu, Guohua

doi:10.1587/elex.17.20200171

Cited by 4 publications

(2 citation statements)

References 29 publications

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“…As one of the most important devices, the PA has been received increasing attention for their performance such as output power, efficiency, bandwidth, etc. Common design techniques for DB PA include reconfigurable devices [3,4,5,6], DB IMN approaches [7,8,9,10,11,12,13,14] and real frequency techniques [15,16,17]. As the most developed approach, DB IMN enables efficient operation by transforming the required frequency-dependent complex load impedance at two arbitrary frequencies to the term impedance.…”

Section: Introductionmentioning

confidence: 99%

Dual band power amplifier with adjustable transmission zeros based on the parallel and series two section transmission line

Guan,

Sun,

Chen

2023

IEICE Electron. Express

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This paper presents a dual-band (DB) high efficiency power amplifier (PA) with two adjustable transmission zeros (TZs). The parallel Two Section Transmission Line (TSTL) is introduced in the impedance matching network (IMN), generating adjustable TZs and compensating for the resulting unrelated difference of admittance at DB fundamentals, which enables the DB IMN exhibits adjustable TZs out-of-band. The matching bandwidth of the DB IMN is further analyzed to seek the target impedance for broadband DB matching. The series TSTL is employed to modulate the target impedance to the impedance of the drain at DB fundamentals while satisfying the high efficiency operating conditions at DB harmonics. For validation, a DB PA is designed and fabricated with a Cree CGH40010F GaN transistor. The fabricated DB PA features the saturated output power of 42.6 dBm and 42.0 dBm with the Power-Added Efficiency (PAE) of 66.1% and 67.8% at 0.9 GHz and 2.4 GHz, respectively. Specially, the bandwidth of the DB PA is 150 MHz, and two adjustable TZs are shown out-of-band.

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Section: Introductionmentioning

confidence: 99%

Dual band power amplifier with adjustable transmission zeros based on the parallel and series two section transmission line

Guan,

Sun,

Chen

2023

IEICE Electron. Express

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“…In addition to the above design methods, novel matching typologies can also be used to construct DBPAs. [26][27][28][29][30][31][32][33][34] In 2018, an offset double-sided parallel strip line was utilized to design a DBPA, which achieves a peak power added efficiency of 78.5% and 76.7% at 1.9 and 3.3 GHz, respectively. 28 In 2021, a circuit topology based on the sector microstrip was proposed for designing DBPAs.…”

mentioning

confidence: 99%

Design of a dual‐band power amplifier over an octave bandwidth employing dual‐band resonators

Liu

Liu²,

Shao³

et al. 2023

Int J Numerical Modelling

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In this article, a compact dual‐band resonator is proposed for designing dual‐band power amplifiers (DBPAs). The proposed resonator has the characteristics of the band‐pass filters, suppressing the out‐of band signals. It is illustrated the proposed resonator has a simple circuit topology without sacrificing the performances of the DBPA. To verify the methodology, a high efficiency DBPA prototype operating at 1.72 and 3.48 GHz is fabricated and measured. The DBPA obtains a bandwidth of 100 and 50 MHz at the low and high frequency bands, respectively. The measurement results show that the DBPA delivers a saturation power of 43.1 and 40.8 dBm at 1.72 and 3.48 GHz, respectively. The measured drain efficiencies of the DBPA are 75.4% and 68.6% at 1.72 and 3.48 GHz, respectively. Meanwhile, when the DBPA is stimulated by a 20 MHz LTE signal with a peak to average power ratio (PAPR) of 7 dB, the measured adjacent channel leakage ratios are lower than −50 dBc at both 1.72 and 3.48 GHz after digital predistortion.

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