Reconfigurable Logic-in-Memory Constructed Using an Organic Antiambipolar Transistor

Abstract

We demonstrate an electrically reconfigurable two-input logic-in-memory (LIM) using a dual-gate-type organic antiambipolar transistor (DG-OAAT). The attractive feature of this device is that a phthalocyanine-cored star-shaped polystyrene is used as a nano-floating gate, which enables the electrical switching of individual logic circuits and stores the circuit information by the nonvolatile memory effect. First, the DG-OAAT exhibited Λ-shaped transfer curves with hysteresis by sweeping the bottom-gate voltage. Programming and erasing operations enabled the reversible shift of the Λ-shaped transfer curves. Furthermore, the top-gate voltage effectively tuned the peak voltages of the transfer curves. Consequently, the combination of dual-gate and memory effects achieved electrically reconfigurable two-input LIM operations. Individual logic circuits (e.g., OR/NAND, XOR/NOR, and AND/XOR) were reconfigured by the corresponding programming and erasing operations without any variations in the input signals. Our device concept has the potential to fulfill an epoch-making organic integration circuit with a simple device configuration.

Charge Transport Advancement in Anti‐Ambipolar Transistors: Spatially Separating Layer Sandwiched between N‐Type Metal Oxides and P‐Type Small Molecules

“…Figure 5i and Table 2 show the trend for the AAT study. [50][51][52][53][54][55][56][57][58][59] AAT studies were evaluated in three aspects: I ON /I OFF , hysteresis, and long-term stability. Hysteresis was evaluated as a V peak shift per voltage range over which |I D | occurs (operational window) in the transfer curve.…”

A Mixture of Negative-, Zero-, and Positive-Differential Transconductance Switching from Tellurium/Indium Gallium Zinc Oxide Heterostructures

“…Transconductance stands as an intrinsic trait of a transistor, delineating the intricate relationship between a variation in the drain current and the increase in the applied gate voltage. − Within its essence lies a metric encapsulating the ability of a transistor in effecting signal modulation or amplification, profoundly affecting the output current dynamics. − Mathematically, transconductance is defined as the ratio of the change in drain current (Δ I d ) to the change in gate voltage (Δ V g ), at fixed other voltage constant. , Transconductance is an evaluation factor in determining the transistor switching or amplifying characteristics, and to be specific, a larger value of transconductance indicates its performance to manipulate their behavior as amplifiers or signal processing components. − Thus, devices only considered its amplitude level without placing significant emphasis on its polarity. However, emerging transconductance behavior, that is, negative differential transconductance was proposed. − This characteristic exhibits a different behavior from conventional transistors, where the size of the output current decreases as the magnitude of the applied gate voltage increases. This uncommon transistor-switching characteristic has introduced unprecedented new applications. − Among them, the most significant and notable direction is the ternary logic circuit.…”

Multifunctional In-Memory Logics Based on a Dual-Gate Antiambipolar Transistor toward Non-von Neumann Computing Architecture

“…These were selected as the n-type and p-type semiconductors and the gate insulator, respectively. The 2D materials have advantages as regards producing the AAT because the 2D materials have surfaces that are atomically flat and free of dangling bonds. , The van der Waals stacking thus makes it possible to form an ideal p–n heterojunction regardless of the lattice mismatch. ,, As a result, large peak-to-valley ratios (PVRs) of 10 3 –10 5 have been achieved in 2D material-based AATs. − These advantages have enabled the development of multivalued logic circuits , and two-input logic circuits. − Another important constituent of our device is polystyrene with a zinc phthalocyanine core (ZnPc-PS 4 ), which works as a nanofloating gate. This material has a three-dimensional (3D) structure where a ZnPc core (semiconductor) is surrounded by four polystyrene chains (insulator) to form a star-shaped polymer. − Hence, carriers can be stably stored in the ZnPc core to provide a nonvolatile memory function.…”