Red Wavelength Range Microcavity Emitters

Dumitrescu, M.; Saarinen, M.; Xiang, N.; Guina, Mircea; Vilokkinen, V.; Pessa, M.

doi:10.1002/1521-396x(200112)188:3<943::aid-pssa943>3.0.co;2-2

Cited by 2 publications

(2 citation statements)

References 3 publications

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“…In our previous works, we realized blue-green VCSELs, green resonant cavity light-emitting diodes (RCLEDs) with a high Q factor (~6000) [23][24][25][26]. At present, GaN:Eu,O and AlInGaP-based red RCLEDs have been reported [9,21,27]. However, electrically injected red InGaN-based RCLEDs have not been fabricated until now because some critical difficulties.…”

Section: Ingan-based Orange-red Resonant Cavitymentioning

confidence: 99%

InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes

Mei

Iida

et al. 2022

J. Lightwave Technol.

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InGaN-based orange-red resonant cavity light-emitting diodes (RCLEDs), were fabricated by using an AlN current-confinement aperture and double dielectric distributed Bragg reflectors (DBRs). For realizing the structure of device, a substrate transfer technique was employed in process of fabrication. The device exhibited optical resonant effect, a high Q factor (~3010), and a narrow emission linewidth (FMHW ~0.2 nm), indicating low optical loss in the resonant cavity. Additionally, due to the three-dimensional (3D) optical confinement effect, the discrete modes of red emission were clearly observed in the far field via an angular resolved measurement system. And then, the energies of the photon states of a red RCLED consists generally with the simulation results based on a circular waveguide model. The saturated emission intensity of the orange-red RCLED was proportional to the area of current injection. This work demonstrated the feasibility of InGaN-based electrically injected orange-red RCLEDs that are useful for the development of displays and communication systems.

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Section: Ingan-based Orange-red Resonant Cavitymentioning

confidence: 99%

InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes

Mei

Iida

et al. 2022

J. Lightwave Technol.

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“…The peak emission wavelength is around 650 nm and FWHM is more than 10 nm only. For the light-emitting device used in the plastic optical fiber (POF), RCLED satisfies the demand of the second minimum attenuation at 650 nm in PMMA [6,7] . For the purpose of easier comparison, the specific data are shown in Tab.1.…”

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confidence: 99%

Effect of top distributed Bragg reflectors on the performance of 650 nm AlGaInP resonant cavity light-emitting diodes

Yang

Yuzhu

et al. 2010

Optoelectron. Lett.

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Three kinds of 650 nm AlGaInP resonant cavity light-emitting diodes (RCLEDs) are fabricated by metal organic chemical vapor deposition (MOCVD) with different numbers of pairs of top distributed Bragg reflectors (DBRs), which are 15, 10 and 5, respectively. By comparing the full width at half maximum (FWHM), light power and the angular far-field emission of the devices, the device with 15 pairs of top DBRs shows the best performance. Its FWHM is 13.4 nm and the light power is 0.63 mW at a driving current of 30 mA.The resonant cavity light-emitting diode (RCLED) proposed by Schubert et al. [1] is a good choice between LED and LD. Because it has a narrower spectrum and better directionality than LED, and is cheaper than LD, RCLED has attracted much attention in recent years [2,3] . The RCLED consists of a top reflective mirror, a bottom reflective mirror and a cavity with active layers. The distributed Bragg reflector (DBR) is usually used as the reflective mirror. The reflectivity of the bottom DBR is designed as high as possible, even up to approximate 100%, while the top one can be designed according to the device requirements [4,5] . Thus, the top DBR has a significant impact on the characteristics of RCLED, such as the emission spectrum, the output light power and the optical field distribution.In this letter, we study the effect of the top DBR pairs on RCLED device performance. Three samples of 650 nm RCLED which have different pair numbers of top DBRs are fabricated by means of metal organic chemical vapor deposition (MOCVD). The results show that the device with 15 pairs of top DBRs shows the best performance.As shown in Fig.1, the epitaxy structure of RCLED is fabricated by MOCVD on the 2 inch n + -type GaAs substrate. At first, 34 pairs of AlAs-Al 0.5 Ga 0.5 As bottom DBR layers grow on the GaAs buffer, and then the active layer grows, including three 5 nm wide compressive strain Ga 0.5 In 0.5 P-(Al 0.5 Ga 0.5 ) 0.5 In 0.5 P multiple quantum wells (MQWs). After the growth of (Al 0.3 Ga 0.7 ) 0.5 In 0.5 P-Al 0.5 In 0.5 P top DBR layers, Mg-doped p-type GaP is deposited as window layers. After the epitaxial growth, p-type AuZnAu top electrode and ntype AuGeNi bottom electrode are formed. Finally, the chips are cutting into the size of 300 m 300 m for device testing.In order to study the influence of top DBRs on RCLED characteristics, 3 samples are made, in which all the other structure parameters are the same, except that the pair number of top DBRs in sample#1 is 15, sample#2 is 10, and sample#3 is 5.The spectrum and optical field distribution of samples are tested by the PMS-50 spectroscope and LED620 light intensity tester (Everfine), and the output light power is measured in an integrating sphere.

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Red Wavelength Range Microcavity Emitters

Cited by 2 publications

References 3 publications

InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes

InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes

Effect of top distributed Bragg reflectors on the performance of 650 nm AlGaInP resonant cavity light-emitting diodes

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