Reduced energy loss in SnO₂/ZnO bilayer electron transport layer-based perovskite solar cells for achieving high efficiencies in outdoor/indoor environments

Abstract

The non-radiative energy loss in perovskite solar cells (PSCs) is a key factor that limits full potential of photovoltaic performance to values below the Shockley–Queisser limit. Herein, we report a...

Polyaniline/Reduced Graphene Oxide Composites for Hole Transporting Layer of High-Performance Inverted Perovskite Solar Cells

“…The film crystallinity of the perovskite absorber onto the composite HTLs was studied by X-ray diffractograms (XRD), as shown in Figure 2 a. The XRD patterns of CH 3 NH 3 PbI 3 films grown on three HTLs showed the tetragonal for CH 3 NH 3 PbI 3 perovskite structure, with the Bragg peaks at 2θ = 14.1°, 28.2°, and 31.8°, which are assigned to (110), (220), and (310) planes, respectively, as reported elsewhere [ 32 , 33 ]. The intensities of the scatterings were comparable in three HTL films without any peak shift peaks.…”

On the role of carboxylated polythiophene in defect passivation of CsPbI 2 Br surface for efficient and stable all‐inorganic perovskite solar cells

“…The P3CT‐passivated device exhibited a quite lower loss of V OC as the light intensity ( n = 1.51), while V OC of the pristine CsPbI 2 Br‐based device significantly decreased under a low‐intensity irradiation ( n = 2.03). The lower n value of the P3CT‐involved device reveals reduced trap‐assisted recombination under device operating conditions, which also confirms the reduced trap density‐assisted charge recombination with P3CT passivation 33 . To obtain more direct evidence for the passivation effect of P3CT, the dark current of single carrier (hole‐only) devices with respective of applied bias.…”

“…The lower n value of the P3CT-involved device reveals reduced trap-assisted recombination under device operating conditions, which also confirms the reduced trap density-assisted charge recombination with P3CT passivation. 33 To obtain more direct evidence for the passivation effect of P3CT, the dark current of single carrier (hole-only) devices with respective of applied bias. The trap-filled limit voltage (V TFL ) of perovskite devices was 0.18 and 0.29 V for the passivated and the pristine CsPbI 2 Br-based devices, respectively.…”

Perovskite indoor photovoltaics: opportunity and challenges

“…[137][138][139][140][141][142][143] Recently, these types of cells have shown high indoor PCE exceeding 35%. [144][145][146][147] It is worth mentioning that perovskite benets from its excellent properties by repeatedly exhibiting higher PCE under the same bandgap conditions. Furthermore, the advantages of the easy solution process, large area, and exibility are very important to drive PIPVs on the road to industrialization.…”