Reduced surface sidewall recombination and diffusion in quantum-dot lasers

Moore, Stephen A.; О’Faolain, L.; Cataluna, Maria Ana; Flynn, Michael B.; Kotlyar, M. V.; Krauss, Thomas F.

doi:10.1109/lpt.2006.881206

Cited by 45 publications

(25 citation statements)

References 11 publications

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“…The spectral flexibility afforded by QD lasers at low pump currents has enabled the demonstration of tunabilities up to 208 nm [8] and 136 nm [59] in CW and mode−locked regimes, respectively, while output power levels up to 0.97 W have been achieved [7], outperforming QD−based VECSELs in tunability, power and wallplug efficiency in the same spectral region [50]. It is anticipated that optical power scaling efforts can successfully continue in the near future, supported by QD lasers' enhanced resilience to beam filamentation compared to QW lasers [87,88], and higher threshold of catastrophic optical damage, which is likely to be assisted by a much lower diffusion of carriers towards the laser facets [89].…”

Section: Discussionmentioning

confidence: 99%

Unlocking Spectral Versatility from Broadly−Tunable Quantum−Dot Lasers

White

Cataluna

2015

Photonics

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Wavelength−tunable semiconductor quantum−dot lasers have achieved impressive performance in terms of high−power, broad tunability, low threshold current, as well as broadly tunable generation of ultrashort pulses. InAs/GaAs quantum−dot−based lasers in particular have demonstrated significant versatility and promise for a range of applications in many areas such as biological imaging, optical fiber communications, spectroscopy, THz radiation generation and frequency doubling into the visible region. In this review, we cover the progress made towards the development of broadly−tunable quantum−dot edge−emitting lasers, particularly in the spectral region between 1.0-1.3 µm. This review discusses the strategies developed towards achieving lower threshold current, extending the tunability range and scaling the output power, covering achievements in both continuous wave and mode−locked InAs/GaAs quantum−dot lasers. We also highlight a number of applications which have benefitted from these advances, as well as emerging new directions for further development of broadly−tunable quantum−dot lasers.

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Section: Discussionmentioning

confidence: 99%

Unlocking Spectral Versatility from Broadly−Tunable Quantum−Dot Lasers

White

Cataluna

2015

Photonics

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“…An open question remains as to what extent electrical pumping of the taper can decrease coupling losses. The relatively narrow taper widths will lead to increased sidewall surface recombination, thereby decreasing the gain [40]. This would lead to additional absorption, which can be wavelength dependent.…”

Section: A Tapered Mode Converters-integration With Passive Soimentioning

confidence: 99%

Hybrid Silicon Photonic Integrated Circuit Technology

Heck

Bauters

Davenport

et al. 2013

IEEE J. Select. Topics Quantum Electron.

378

163

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Abstract-In this paper, we review the current status of the hybrid silicon photonic integration platform with emphasis on its prospects for increased integration complexity. The hybrid silicon platform is maturing fast as increasingly complex circuits are reported with tens of integrated components including on-chip lasers. It is shown that this platform is well positioned and holds great potential to address future needs for medium-scale photonic integrated circuits.

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“…The inhomogeneous broadening permits wide bandwidth emission used in edge emitting superluminescent LEDs, 9 while the short carrier diffusion length reduces the effect of surface recombination at exposed p-n junctions. 10 The GaAs substrate is transparent to the emission from the dots and processing techniques, such as selective oxidation, can be employed.…”

Section: Broadband Quantum Dot Micro-light-emitting Diodes With Parabmentioning

confidence: 99%