Reducing inter-pixel crosstalk in HgCdTe detectors

Inter-pixel crosstalk improvement based on a thin crosstalk-block layer for mesa-based InGaAs photodetectors

“…Recently, with the increasing demand for smaller pixel pitches for a denser array, inter-pixel crosstalk has been extensively characterized on the different material systems. [7][8][9][10][11][12][13][14] Here, inter-pixel crosstalk has been improved with an epitaxial layer modification in the depleted passivation structure while preserving the dark current suppression ability of this structure. Both depleted passivation and modified depleted passivation structures are numerically compared by an experimental-like crosstalk measurement technique to emphasize the crosstalk improvement.…”