Reducing Luminescence Intensity and Suppressing Irradiation‐induced Darkening of Bi₄Ge₃O₁₂ by Ce‐doping for Radiation Detection

Abstract

Due to its short radiation length, moderate light output (8000‐9000 photons/MeV), high density (7.13 g cm−3), and non‐hygroscopicity, etc., Bi4Ge3O12 (BGO) material has been widely utilized as an advanced scintillator for irradiation detection. However, pure BGO cannot meet the requirements for future physics experiments and state‐of‐art industrial facilities coupled with a silicon photomultiplier (SiPM) due to its slow response time, poor radiation resistance, and excessive light output. Herein, a Ce‐doping strategy is reported for efficiently improving the overall performance (e.g., irradiation resistance, decay time, radioluminescence, and light output) of BGO that can be expectedly applied in future high energy physics detection. Ce‐doped BGO (BGO:Ce) displays higher radiation resistance ability under 10 h UV irradiation (97% of original) and a faster fluorescence lifetime (269 ns), superior to pure BGO. Furthermore, BGO:Ce shows ≈30% luminescence intensity of pure BGO, well eliminating the oversaturation of SiPM coupled with scintillation detectors. Theoretical calculations imply that an intense competition between electron or hole traps and Ce ions (Ce3+, Ce4+) can effectively reduce the concentration of color centers, thus enhancing irradiation resistance ability.