Reduction in thermal conductivity and electrical resistivity of indium and tellurium co-doped bismuth selenide thermoelectric system

Hegde, Ganesh; Prabhu, A. N.; Huang, Ran; Kuo, Y. K.

doi:10.1007/s10854-020-04383-7

Cited by 22 publications

(11 citation statements)

References 63 publications

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“…A change in the lattice parameters of indium-and selenium-doped bismuth telluride was found with an increase in lattice compressive strain. 50,51 No impurity was observed in as-synthesized samples of Bi 2 Te 3 prepared by rational nanostructure design, as reported by Min et al 140 Specific reports are available on the thermoelectric properties of ball-milled powder of bismuth antimony telluride, where the single-phase XRD patterns were obtained with a rotation speed of 150 rpm with no impurity peaks. 141…”

Section: Crystal Structurementioning

confidence: 61%

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A Review on Doped/Composite Bismuth Chalcogenide Compounds for Thermoelectric Device Applications: Various Synthesis Techniques and Challenges

Hegde

Prabhu

2022

J. Electron. Mater.

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One of the global demands of primary research objectives is to achieve human energy harvesting and self-powered wearable technologies. Bismuth chalcogenides are the trending materials for thermoelectric generators and Peltier coolers due to their notable thermoelectric figure of merit in the low- and room-temperature range. Systematic alloying of bismuth chalcogenides leads to a substantial change in their electrical and thermal transport properties. The high thermoelectric figure of merit (ZT) observed in bismuth chalcogenides is due to the rhombohedral crystal structure, lower effective mass, low thermal conductivity, and large band degeneracy. This review is aimed at identifying and quantifying different techniques for effectively improving the thermoelectric properties of doped/composite bismuth chalcogenide compounds. The review also examines the various synthesis methods including ball milling (BM), spark plasma sintering (SPS), self-propagating high-temperature synthesis (SHS), soft chemical reaction, hydrothermal reaction, melt growth (MG), melt spinning (MS), sintering and consolidated synthesis, and hot extrusion, with their respective figures of merit. Since device modification is a challenging task, this report reviews the present research on bismuth chalcogenide alloys to benchmark future development using various techniques. Graphical Abstract

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Section: Crystal Structurementioning

confidence: 61%

“…In bismuth-, tellurium-, antimony-, and indium-doped alloys, negatively charged antisite defects such as Sb Te , Bi Te and In Te are created when there is excess cation occupancy on empty anion sites, which prefer p-type conductivity between compounds. 50,51 Anion vacancies V .. Te and V ..…”

Section: Electronic Structurementioning

confidence: 99%

A Review on Doped/Composite Bismuth Chalcogenide Compounds for Thermoelectric Device Applications: Various Synthesis Techniques and Challenges

Hegde

Prabhu

2022

J. Electron. Mater.

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“…4) [19]. The two additional reflections noticed around the plane (015) are due to the unveiling of twining orientations [19,20]. A systematic decrease in the crystallite size has been found with decreasing lattice parameters (Table 1), which is reported to be because of Sn atoms non-intercalation through Van der Waals interlayer [21].…”

Section: Resultsmentioning

confidence: 89%

“…These changes result from the sharing of single lattice points by the prevailing crystal face (Fig. 4) [19]. The two additional reflections noticed around the plane (015) are due to the unveiling of twining orientations [19,20].…”

Section: Resultsmentioning

confidence: 98%

Improved electrical conductivity and power factor in Sn and Se co-doped melt-grown Bi2Te3 single crystal

Hegde

Prabhu

Chattopadhyay

2021

J Mater Sci: Mater Electron

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In the current work, growth and thermoelectric characterization of tin and selenium co-doped single crystal bismuth telluride have been carried out in the range of temperature 10–400 K. The crystals show hexagonal crystal structure with R$$\overline{3 }$$ 3 ¯ m space group. The direction of growth, quality of the single crystals, the density of dislocation, and dopants effect on the inner plane structure of the crystals have been analyzed through high-resolution X-ray diffraction study. Energy dispersive analysis of X-rays approves the elemental composition, and field emission scanning electron microscopy shows uniform growth with micro precipitates on the surface of the crystals. Quasi degenerate and non-degenerate electrical resistivity is observed in the pristine and doped samples, respectively. Temperature-dependent Seebeck coefficient measurements confirm the n-type semiconducting nature of the pristine as well as doped samples. Temperature-dependent power factor of (Bi0.96Sn0.04)2Te2.7Se0.3 is found to increase by 1.1 times, and electrical resistivity reduced by 3.3 times as compared to pristine Bi2Te3.

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“…Finally, we consider the low temperature regime where both the phonon frequency and the phonon scattering parameter increases below 50 K, accompanied by a drop in the fitted conductivity (as shown in 5b). Importantly, the temperature at which the sudden rise of the phonon parameters occurs seems to be largely independent of x, with the maximum phonon linewidth occurring between 20 − 30 K. This implies that this feature is not due to phonon freeze-out, which should be strongly dependent on the Se content [58,59]. A change in the phonon frequency, along with an increase in the phonon linewidth is a possible indicator of coupling between the phonon mode and some external continuum [17,60].…”

Section: Resultsmentioning

confidence: 91%

Effects of structural ordering on infrared active vibrations within Bi2(Te(1−x)Sex)3<

Knox

Vaughan²,

Burnett³

et al. 2022

Phys. Rev. B

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We have performed a materials investigation into the properties of the THz conductivity spectra in the ternary alloy Bi 2 (Te (1−x) Se x ) 3 as a function of selenium fraction, x and temperature. We find that the reduction in crystalline anharmonicity caused by the preferential ordering of the x = 1/3 phase of Bi 2 (Te (1−x) Se x ) 3 results in the prominent E 1 u phonon (occurring between 1.5 and 1.9 THz) red-shifting on cooling less than the binary Bi 2 Te 3 and Bi 2 Se 3 samples. We also find that the E 1 u phonon couples to an electronic continuum at low temperatures (T ⩽ 40 K), regardless of Bi 2 (Te (1−x) Se x ) 3 stoichiometry or the Hall mobility of the topological insulator crystal. These results highlight the role that these optical modes play in the electronic and thermal transport within this ternary alloy, and pave the way for exploring the interesting phonon dynamics within these topological insulator and thermoelectric materials.

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Reduction in thermal conductivity and electrical resistivity of indium and tellurium co-doped bismuth selenide thermoelectric system

Cited by 22 publications

References 63 publications

A Review on Doped/Composite Bismuth Chalcogenide Compounds for Thermoelectric Device Applications: Various Synthesis Techniques and Challenges

A Review on Doped/Composite Bismuth Chalcogenide Compounds for Thermoelectric Device Applications: Various Synthesis Techniques and Challenges

Improved electrical conductivity and power factor in Sn and Se co-doped melt-grown Bi2Te3 single crystal

Effects of structural ordering on infrared active vibrations within Bi2(Te(1−x)Sex)3<

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