Reliability of La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT

Abstract

Reliability of La-silicate gate dielectrics with tungsten carbide gate electrode have been investigated by Constant Voltage Stress (CVS) measurement. During constant voltage stress of the MOS capacitors, La-silicate MOS capacitors with tungsten carbide gate electrodes show better reliability due to the nice interface properties.