Research and development efforts on texturization to reduce the optical losses at front surface of silicon solar cell

Abdullah, Mohd Faizol; Alghoul, M. A.; Naser, Hameed; Asim, Nilofar; Ahmadi, Samad; Yatim, Baharudin; Sopian, Kamaruzzaman

doi:10.1016/j.rser.2016.07.065

Cited by 79 publications

(36 citation statements)

References 106 publications

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“…A degree of environmental encapsulation is also provided, except in the case of silicon surface texturing. Considering its popularity as an AR technique in the wider silicon PV community and some of the latest developments including pyramid rounding, it is somewhat surprising that the use of random pyramids took until 2016 to appear in the carbon nanotube–silicon literature, though it is expected to feature more in future work.…”

Section: Improving Performancementioning

confidence: 99%

Advances in Carbon Nanotube–Silicon Heterojunction Solar Cells

Tune

Flavel

2018

Advanced Energy Materials

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in this field as represented in Figure 2 and is broadly divided into two halves. The first half presents some essential background information on carbon nanotubes, particularly in relevance to their role in these kinds of solar cells, as well as a consideration of aspects such as thin film properties, device stability, scale-up, and operating mechanism, while the second half deals with the factors involved in improving performance.This review has been constrained almost exclusively to covering developments in the field of carbon nanotubes interfaced with monocrystalline silicon, though the field is also informed by other work being done in the associated areas of graphene-silicon and conducting polymer-silicon solar cells, as well as the use of nanotube films interfaced with polycrystalline silicon and other semiconductors, perovskites, organic photovoltaics, and more. This is partly in the interests of being able to provide a useful and informative level of technical detail while keeping the work to a manageable and digestible size both for those already working in the field and those new to it. It is also because although there are many parallels between, for example, the nanotube-silicon and polymer-silicon or graphene-silicon works, there are several important and fundamental differences, not the least of which may be the potential complexity/diversity of the operating mechanism(s) in the nanotube-silicon case. For information on these and other related types of photovoltaic device architectures incorporating carbon nanotubes, we refer the reader to Zielke et al., [49] Wang et al., [50] and Arnold et al., [51] as well as Li et al. [52] which also includes an overview of the carbon nanotube-silicon architecture as a part of the broader carbon-silicon theme. Table S1 of the Supporting Information provides a detailed and comprehensive list of published works in the carbon nanotube-silicon field along with various performance measurements, device structure parameters, and material properties. BackgroundAlthough once an exotic, poorly understood, and difficult to obtain material, carbon nanotubes are now relatively well known, well understood, and widely available from commercial suppliers. Briefly, single-walled carbon nanotubes (SWCNT) are very high aspect ratio cylinders of graphene in which the Heterojunctions of carbon nanotubes interfaced with silicon respond to light illumination and can be operated in the power regime as solar cells. Very significant advances have been made in the last 5 years both in terms of headline performance values and in fundamental understanding of the underlying operating principles, as well as the sophistication of the devices and studies being reported. The body of literature is growing rapidly, and the latest power conversion efficiency and active area records have now reached over 17% and 2 cm 2 , respectively. Thus, the authors believe that it is now a useful time for an evaluation of the current state-of-the-art and challenges going forward, as well as for a comprehensively ...

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Section: Improving Performancementioning

confidence: 99%

Advances in Carbon Nanotube–Silicon Heterojunction Solar Cells

Tune

Flavel

2018

Advanced Energy Materials

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“…Another factor which is the changes in W and S dimension after the fabrication of inverted pyramidal microstructures, however seems to give a minor effect on that discrepancy between the simulated and measured reflectance. Surface reflectance is reduced by the inclined surfaces of Si (111) before travelling and being absorbed into the bulk Si (Abdullah et al 2016). Since the studied structure is considered larger than the incident light wavelength, the change of W in micrometer-scale does not induce a significant difference on the reflectance.…”

Section: Resultsmentioning

confidence: 99%

“…The values of W are varied in the range of 1-10 µm, while the values of D are set using a relationship of D= (W/2) tan 54.7 o . Here, 54.7 o is the angle between <100> and <111> in Si crystal (Abdullah et al 2016). The values of S for the square arrays are varied in range of 0-3 µm.…”

Section: Simulationmentioning

confidence: 99%

“…However, the cost of TMAH is much more expensive as compared with KOH and NaOH. The advantages of using TMAH are: A less residue contamination of K + and Na + ions on the textured surface (Abdullah et al 2016), a capability in producing uniform micro-textured structures (Iencinella et al 2004), and only a low concentration of TMAH is required for the etching of Si surface (Abdullah et al 2016). The introduction of surfactant such as isopropyl alcohol (IPA) in TMAH can further improve the uniformity and shape of micro-textured structures (Ou et al 2011;Papet et al 2006).…”

Section: Introductionmentioning

confidence: 99%

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Reflectance Characteristics of Silicon Surface Fabricated with the Arrays of Uniform Inverted Pyramid Microstructures in UV-Visible Range

Abdullah¹,

Hashim²

2019

JSM

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In this paper, inverted pyramidal microstructures are designed and fabricated on silicon (Si) surface. The characteristics of surface reflectance are simulated using two-dimensional (2D) finite-difference time-domain (FDTD) method by varying the spacing (S) and width (W) of the pyramidal microstructures. The results showed that the effect of S is more significant compared to W where the reflectance of the irradiated light has been increased gradually with the increase of S from 0 to 3 µm, and the difference is around 9.6%. Due to the etching constraint, S= 3 µm is chosen for the fabrication. Textured structure is fabricated by the anisotropic etching of tetramethyl-ammonium hydroxide (TMAH) with additional of isopropyl alcohol (IPA). Long etching time of 120 min is required to form uniform arrays of pyramidal microstructures with smooth and well-terminated four sidewalls at (111) plane. Due to the undercut etching under SiO 2 mask, it results to the formation of slightly larger W and smaller S in the fabricated structures. The measured average reflectance in UVvisible range for the Si with inverted pyramidal microstructures is very low down to 10.4%. The discrepancy between the measured and simulated values is speculated to be due to the use of 2D FDTD instead of three-dimensional (3D) FDTD. ABSTRAKDalam kertas ini, mikrostruktur piramid songsang Si bersaiz mikro telah direka bentuk dan difabrikasi di atas permukaan silikon (Si). Ciri pantulan permukaan telah disimulasi menggunakan kaedah domain-masa perbezaan-terhingga (FDTD) dua-dimensi (2D) dengan membezakan jarak dan lebar mikrostruktur piramid. Data menunjukkan kesan jarak (S) adalah lebih ketara jika dibandingkan dengan kesan lebar (W) terhadap pantulan permukaan. Pantulan cahaya yang disinarkan telah meningkat secara beransur-ansur dengan peningkatan S daripada 0 kepada 3 µm dan perbezaan adalah sekitar 9.6%. Disebabkan kekangan punaran, S= 3 µm telah dipilih untuk difabrikasi. Tekstur telah difabrikasi dengan cara punaran anisotropik oleh tetra metil ammonium hidroksida (TMAH) berserta campuran alkohol isopropil (IPA). Punaran pada tempoh yang lama iaitu 120 min diperlukan untuk membentuk jajaran mikrostruktur piramid yang seragam dengan empat sisi tepi pada satah (111) yang licin berserta penamatan yang baik. Disebabkan potongan bawah punaran di bawah topeng SiO 2 , ia membentuk W yang sedikit lebih besar dan S yang lebih kecil bagi struktur yang telah difabrikasi. Purata pantulan dalam julat UV-nampak yang telah diukur bagi Si dengan mikrostruktur piramid songsang adalah sangat rendah iaitu 10.4%. Percanggahan antara nilai yang diukur dengan nilai yang disimulasi telah dispekulasi disebabkan penggunaan FDTD 2D dan bukannya FDTD tiga-dimensi (3D).

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“…Ефективність кремнієвих СЕ значною мірою залежить від фотогенераційних втрат, зумовлених високим коефіцієнтом відбивання, який для планарного кремнію може сягати 30%. Для зменшення оптичних втрат та збільшення ефективності СЕ застосовують антивідбивні покриття (АВП) [9,10], різні типи текстур поверхні [11][12][13][14], а також фронтальні контактні системи [15,16], які необхідно технологічно правильно нанести на поверхню СЕ. Зазначені обставини стимулюють розроблення оптимізованих технологій отримання СЕ з використанням поруватих шарів, АВП і технологічно правильно нанесеної на поверхню СЕ фронтальної контактної системи, які в перспективі могли б замінити традиційні і були набагато дешевші.…”

Section: вступunclassified

Optimization of Porous Silicon Characteristics for Solar Batteries

Єрохов¹,

Ховерко²,

Nichkalo³

2019

SEMST

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Анотація. Досліджено вплив технологічного процесу формування антивідбивних шарів на основі поруватого кремнію на стан фронтальної контактної системи кремнієвих сонячних елементів. Для оптимізації даної технології використано електроліт C 2 H 5 OH:H 2 O:HF=1:1:1 при поверхневій густині анодного заряду 0,46 Кл/см 2 . Зменшення часу анодування в такому електроліті до 10 с дозволило отримати шари поруватого кремнію без суттєвого пошкодження контактної струмозбиральної гребінки. Встановлено механізм і ступінь впливу фронтального шару поруватого кремнію на основні параметри досліджуваних зразків сонячних елементів. Для моно-і мультикристалічних сонячних елементів приріст фотоструму перевищував 50%, коефіцієнт корисної дії підвищився на 25% і 22%, відповідно для монокристалічних і мультикристалічних зразків. При цьому виявлено зменшення напруги неробочого ходу на 2,5% для всіх досліджуваних зразків.Ключові слова: поруватий кремній; сонячний елемент; антивідбивне покриття; електрохімічне травлення

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Research and development efforts on texturization to reduce the optical losses at front surface of silicon solar cell

Cited by 79 publications

References 106 publications

Advances in Carbon Nanotube–Silicon Heterojunction Solar Cells

Advances in Carbon Nanotube–Silicon Heterojunction Solar Cells

Reflectance Characteristics of Silicon Surface Fabricated with the Arrays of Uniform Inverted Pyramid Microstructures in UV-Visible Range

Optimization of Porous Silicon Characteristics for Solar Batteries

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