Research on the contamination failure mechanism of HgCdTe IRFPA detectors

Abstract

HgCdTe infrared focal plane array imaging detectors have been widely used in a variety of fields such as night vision surveillance, remote sensing mapping and astronomical observation. In recent years, with the development of semiconductor manufacturing processes, the array size of HgCdTe IR focal plane array imaging detectors has gradually increased, and the preparation process has become increasingly complex. During the preparation process, impurity ions can enter the HgCdTe material and cause degradation of device performance or even device failure. This work investigates the distribution of impurity elements in HgCdTe IR focal plane array detectors prepared by both processes and the mechanism by which impurity elements cause device failure.