Residual Native Shallow Donor in ZnO

Look, David C.; Hemsky, Joseph W.; Sizelove, J. R.

doi:10.1103/physrevlett.82.2552

Cited by 1,081 publications

(589 citation statements)

References 17 publications

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“…33 The energetically favorable site for a single Zn interstitial in ZnO is the octahedral site. 51 The band structure for a 3 ϫ 3 ϫ 2 ZnO supercell with a single Zn interstitial at the energyminimzed octahedral site is shown in Fig.…”

Section: E Zn Interstitial Zn Imentioning

confidence: 99%

“…2͑e͒ shows that the density of states for this level lies just below the bulk CBM͔, which would confirm the assignment of the state observed in experiment. 33 The transition level and single-particle energy eigenvalues for the ⑀͑0 ͉ + ͒ transition are given in Table II. The singleparticle eigenvalue is −0.9 eV below the CBM at the ⌫ point, and the transition level is at −0.6 eV below the CBM.…”

Section: E Zn Interstitial Zn Imentioning

confidence: 99%

“…The Zn i interstitial is known to be a shallow donor and estimates 27,33,[61][62][63] of the position of the donor level range between 30 meV ͑Ref. 33͒ and 200 meV ͑Ref.…”

Section: Fig 11 Spin Density For Two Co Ions and A V Omentioning

confidence: 99%

“…7 and 24-26͒ were originally studied in the 1960s and 1970s by magnetic resonance and optical techniques. Recent magnetic resonance, [27][28][29][30][31][32] carrier mobility, 33 positron annihilation spectroscopy, 34 and first-principles calculations [35][36][37] have given a fuller picture of defect-induced electronic states in ZnO. Magnetic resonance techniques 8,9,38 have been applied to Zn 1−x Co x O and Zn 1−x Mn x O films and nanoclusters.…”

Section: Introductionmentioning

confidence: 99%

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Role of defects in ferromagnetism inZn1−xCoxO: A hybrid density-functional study

2006

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Section: E Zn Interstitial Zn Imentioning

confidence: 99%

Section: E Zn Interstitial Zn Imentioning

confidence: 99%

“…The Zn i interstitial is known to be a shallow donor and estimates 27,33,[61][62][63] of the position of the donor level range between 30 meV ͑Ref. 33͒ and 200 meV ͑Ref.…”

Section: Fig 11 Spin Density For Two Co Ions and A V Omentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Role of defects in ferromagnetism inZn1−xCoxO: A hybrid density-functional study

2006

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“…Furthermore, their calculated migration barrier is very low [57], leading to doubts over the stability of such centres. Interstitial zinc has also been attributed as the cause of n-type conductivity in ZnO [69]. However, as for SnO 2 , subsequent theoretical studies found rather high formation energies and low migration barriers for the cation interstitial in ZnO, and also other TCO materials [51,53,70].…”

Section: Cation Interstitialsmentioning

confidence: 99%

Conductivity in transparent oxide semiconductors

King

Veal

2011

J. Phys.: Condens. Matter

226

180

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Abstract. Despite an extensive research effort for over 60 years, an understanding of the origins of conductivity in wide band-gap transparent conducting oxide (TCO) semiconductors remains elusive. While TCOs have already found widespread use in device applications requiring a transparent contact, there are currently enormous efforts to (i) increase the conductivity of existing materials, (ii) identify suitable alternatives, and (iii) attempt to gain semiconductor-engineering levels of control over their carrier density, essential for the incorporation of TCOs into a new generation of multifunctional transparent electronic devices. These efforts, however, are dependent on a microscopic identification of the defects and impurities leading to the high unintentional carrier densities present in these materials. Here, we review recent developments towards such an understanding. While oxygen vacancies are commonly assumed to be the source of the conductivity, there is increasing evidence that this is not a sufficient mechanism to explain the total measured carrier concentrations. In fact, many studies suggest that oxygen vacancies are deep, rather than shallow, donors, and their abundance in as-grown material is also debated. We discuss other potential contributions to the conductivity in TCOs, including other native defects, their complexes, and in particular hydrogen impurities. Convincing theoretical and experimental evidence is presented for the donor nature of hydrogen across a range of TCO materials, and while its stability and the presence of interstitial and substitutional species are still somewhat open questions, it is one of the leading contenders for unintentional conductivity in TCOs. We also review recent work indicating that the surfaces of TCOs can support very high carrier densities, opposite to the case of conventional semiconductors. In thin-film materials/devices and, in particular, nanostructures, the surface can have a large impact on the total conductivity in TCOs. We discuss models that attempt to explain both the bulk and surface conductivity based on features of the bulk band structure common across the TCOs, and compare these materials to other semiconductors. Finally, we briefly consider transparency in these materials, and its interplay with conductivity. Understanding this interplay, as well as the microscopic contenders for the conductivity of these materials, will prove essential to the future design and control of TCO semiconductors, and their implementation into novel multifunctional devices.

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Defect-Related Donors, Acceptors, and Traps in GaN

Look

2001

phys. stat. sol. (b)

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Residual Native Shallow Donor in ZnO

Cited by 1,081 publications

References 17 publications

Role of defects in ferromagnetism inZn1−xCoxO: A hybrid density-functional study

Role of defects in ferromagnetism inZn1−xCoxO: A hybrid density-functional study

Conductivity in transparent oxide semiconductors

Defect-Related Donors, Acceptors, and Traps in GaN

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