Resistance-dependent field effect on the radiation behavior of MOS capacitors examined by instantaneous-terminal-voltage technique

Hwu, Jenn–Gwo; Fu, Shyh-Liang

doi:10.1016/0022-3697(90)90130-8

Journal of Physics and Chemistry of Solids

1990

DOI: 10.1016/0022-3697(90)90130-8

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Resistance-dependent field effect on the radiation behavior of MOS capacitors examined by instantaneous-terminal-voltage technique

Jenn–Gwo Hwu

Shyh-Liang Fu

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Resistance-dependent field effect on the radiation behavior of MOS capacitors examined by instantaneous-terminal-voltage technique

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References 10 publications

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