Resistive Switching Memory Devices Based on Body Fluid of Bombyx mori L.

Wang, Lu; Wen, Dianzhong

doi:10.3390/mi10080540

Cited by 9 publications

(12 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Among the available biomaterials, protein is a crucial nutrient for the human body, as it is a building block of tissue . Protein has effective electrical properties, due to which it has been used as the functional layer of various electronic devices including LEDs, TFTs, and RRAMs in various forms such as egg-albumen, ferritin, gelatin, lignin, silk, biovine serum, and collagen . The progression in protein-based RRAM devices reported to date has been discussed in detail along with their prospects and limitations.…”

Section: Protein-based Rram Devicesmentioning

confidence: 99%

“…Such bioresorbable RRAM devices have potential applications in biocompatible and secure memory systems of future-generation electronics. Wang et al fabricated another bio-RRAM device with the configuration of Al/ Bombyx mori body fluid film/ITO on a glass substrate as shown in the schematic diagram presented in Figure (a). The magnitudes of V set and V reset were 0.85 and 3.05 V, respectively, with a high switching ratio of 10 4 .…”

Section: Protein-based Rram Devicesmentioning

confidence: 99%

“…(a) Schematic drawing of the Al/ Bombyx mori body fluid film/ITO bio-RRAM . (b) Multiple electrical characteristic curves for two memory cells of bio-RRAM . (c) Retention data for showing the nonvolatile memory behavior .…”

Section: Protein-based Rram Devicesmentioning

confidence: 99%

“…(b) Multiple electrical characteristic curves for two memory cells of bio-RRAM . (c) Retention data for showing the nonvolatile memory behavior . (d) Double-logarithmic I – V curve of the Al/ Bombyx mori body fluid film/ITO bio-RRAM to show the conduction mechanism of this memory device .…”

Section: Protein-based Rram Devicesmentioning

confidence: 99%

See 3 more Smart Citations

Biomaterial-Based Nonvolatile Resistive Memory Devices toward Ecofriendliness and Biocompatibility

Rehman

Kim

et al. 2021

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

Advancement in electronic industry has revolutionized the lifestyle of mankind at the cost of leaving adverse effects on the environment due to the use of toxic and nondegradable functional materials abundantly used in various electronic devices. The use of biomaterials in electronic devices with attractive properties is by far the best solution for protecting our environment from hazardous materials without compromising the growth of the electronic industry. Biomaterials are environmentally friendly and biocompatible with the added advantages of easy processing, transparency, flexibility, abundant resources, sustainability, recyclability, and simple extraction. This Review targets the characteristics, advancements, role, limitations, and prospects of using biomaterials as the functional layer of a resistive random-access memory (RRAM) device with a primary focus on the electronic properties of bio-RRAMs. Among the available memory devices, RRAMs have a huge potential to become the nonvolatile memory of the next generation owing to their simple structure, high scalability, and low power consumption. Applications of using biomaterial-based RRAMs have also been discussed including mimicking the human brain, fabricating wearable memory devices, and implanting bio-RRAMs. The motivation behind this work is to promote the use of biomaterials in electronic devices and attract researchers toward a green solution of hazardous problems associated with the electronic industry.

show abstract

Section: Protein-based Rram Devicesmentioning

confidence: 99%

Section: Protein-based Rram Devicesmentioning

confidence: 99%

Section: Protein-based Rram Devicesmentioning

confidence: 99%

Section: Protein-based Rram Devicesmentioning

confidence: 99%

See 2 more Smart Citations

Biomaterial-Based Nonvolatile Resistive Memory Devices toward Ecofriendliness and Biocompatibility

Rehman

Kim

et al. 2021

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

show abstract

“…Resistive random access memory is a kind of nonvolatile memory with excellent application prospects [ 1 , 2 , 3 , 4 , 5 ]. Because of its advantages, such as a simple structure, simple processing, low cost, low power consumption, and compatibility with CMOS processes, it has received wide attention [ 6 , 7 , 8 , 9 , 10 , 11 , 12 ]. At present, the materials used to fabricate memristors include perovskites [ 13 ], metal oxides [ 14 ], natural biomaterials [ 7 , 15 , 16 ], and organic dielectric materials [ 17 ].…”

Section: Introductionmentioning

confidence: 99%

Dual-Tunable Memristor Based on Carbon Nanotubes and Graphene Quantum Dots

et al. 2021

View full text Add to dashboard Cite

Nanocarbon materials have the advantages of biocompatibility, thermal stability and chemical stability and have shown excellent electrical properties in electronic devices. In this study, Al/MWCNT:GQD/ITO memristors with rewritable nonvolatile properties were prepared based on composites consisting of multiwalled carbon nanotubes (MWCNTs) and graphene quantum dots (GQDs). The switching current ratio of such a device can be tuned in two ways. Due to the ultraviolet light sensitivity of GQDs, when the dielectric material is illuminated by ultraviolet light, the charge capture ability of the GQDs decreases with an increasing duration of illumination, and the switching current ratio of the device also decreases with an increasing illumination duration (103–10). By exploiting the charge capture characteristics of GQDs, the trap capture level can be increased by increasing the content of GQDs in the dielectric layer. The switching current ratio of the device increases with increasing GQD content (10–103). The device can be programmed and erased more than 100 times; the programmable switching state can withstand 105 read pulses, and the retention time is more than 104 s. This memristor has a simple structure, low power consumption, and enormous application potential for data storage, artificial intelligence, image processing, artificial neural networks, and other applications.

show abstract

Realization of Artificial Nerve Synapses Based on Biological Threshold Resistive Random Access Memory

2023

View full text Add to dashboard Cite

A one‐selector one resistor (1S1R) array formed of a selector and resistive random access memory (RRAM) is an important way to achieve high‐density storage and neuromorphic computing. However, the low durability and poor consistency of the selector limit its practical application. The fabrication of a selector based on egg albumen (EA) is reported in this paper. The device exhibits excellent bidirectional threshold switching characteristics, including a low leakage current (10−7 A), a high ON/OFF current ratio (106), and good endurance (>700 days). It is used as a selector to form a 1S1R unit in combination with an EA‐based RRAM to effectively solve the leakage current in a crossbar array. A feasible solution is provided for the realization of a protein‐based 1S1R array to achieve high‐density storage. The 1S1R unit shows characteristics similar to those of synapses in the human brain under impulse excitation and has great potential in simulating the human brain for neuromorphic calculations.)

show abstract

Resistive Switching Memory Devices Based on Body Fluid of Bombyx mori L.

Cited by 9 publications

References 37 publications

Biomaterial-Based Nonvolatile Resistive Memory Devices toward Ecofriendliness and Biocompatibility

Biomaterial-Based Nonvolatile Resistive Memory Devices toward Ecofriendliness and Biocompatibility

Dual-Tunable Memristor Based on Carbon Nanotubes and Graphene Quantum Dots

Realization of Artificial Nerve Synapses Based on Biological Threshold Resistive Random Access Memory

Contact Info

Product

Resources

About